Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications - Brossura

Brossura

ISBN 10: 0128105127 ISBN 13: 9780128105122

Casa editrice: Elsevier, 2016

Riassunto

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III–V, IV, and II–VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.

The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.

• Presents a comprehensive reference on the novel physical phenomena and properties of semiconductor nanostructures
• Covers recent developments in the field from all over the world
• Provides an International approach, as chapters are based on results obtained in collaboration with research groups from Russia, Germany, France, England, Japan, Holland, USA, Belgium, China, Israel, Brazil, and former Soviet Union countries

Su questo libro

L'autore:

Professor Alexander V. Latyshev is Director of Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, Russia. He is a specialist in the field of semiconductor physics, crystal growth, nanoheterostructures, electron&ion beam lithography, crystallography, structural diagnostics, and electron and atomic force microscopies. In particular Latyshev's research interests include various modes of electron microscopy and their applications to diagnostic and the study of semiconductor and metal surfaces. He is particularly interested in the field of ultra high vacuum reflection electron microscopy (UHV-REM) for in situ studies of the kinetic and structural processes during the sublimation, phase transition, initial stages of epitaxy and surface gas reaction. He is one of the pioneers, who revived this method and applied to various problems of surface science in Russia. He has published over 200 papers, seven book chapters (in English) and two monographs (in Russian). He has received several scientific awards includingthe RAS Corresponding Member and the Russian Federation Government Prize in Education in the field of optoelectronics.

Su questa edizione

• Editore: Elsevier
• Data di pubblicazione: 2016
• ISBN 10: 0128105127
• ISBN 13: 9780128105122
• Rilegatura: Copertina flessibile
• Numero edizione: 1
• Numero di pagine: 552
• Redattore: Latyshev Alexander V.