Fundamentals of Power Semiconductor Devices - Rilegato

Baliga, B. Jayant

Rilegato

ISBN 10: 0387473130 ISBN 13: 9780387473130

Casa editrice: Springer Nature, 2008

Riassunto

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

Su questo libro

Dalla quarta di copertina:

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are developed. The treatment focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices.

Drawing upon years of practical experience and using numerous examples and illustrative applications, B. Jayant Baliga discusses:

• Numerical simulation examples to elucidate the operating physics and validate the models
• Device performance attributes that allow practicing engineers in the industry to develop products
• Treatment of all types of power rectifiers and transistors to create a comprehensive reference in the field
• Fundamentals of Power Semiconductor Devices will be of interest to practicing engineers in the power semiconductor device community and can also serve as an ideal textbook for teaching courses on power semiconductor devices due to the extensive analytical treatment provided for all device structures.

Contenuti:

Introduction.- Material properties and transport physics.- Breakdown voltage.- Schottky rectifiers.- P-i-N rectifiers.- Power MOSFETs.- Bipolar junction transistors.- Thyristors.- Insulated gate bipolar transistors.- Synopsis.

Su questa edizione

• Editore: Springer Nature
• Data di pubblicazione: 2008
• ISBN 10: 0387473130
• ISBN 13: 9780387473130
• Rilegatura: Copertina rigida
• Numero edizione: 1
• Numero di pagine: 1069