FinFETs and Other Multi-Gate Transistors - Rilegato

Rilegato

ISBN 10: 038771751X ISBN 13: 9780387717517

Casa editrice: Springer Verlag, 2007

Riassunto

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Su questo libro

Dalla quarta di copertina

FinFETs and Other Multi-Gate Transistors provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits.

The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.

FinFETs and Other Multi-Gate Transistors is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.

Dettagli dell'edizione

• Editore: Springer Verlag
• Data di pubblicazione: 2007
• Lingua: Inglese
• ISBN 10: 038771751X
• ISBN 13: 9780387717517
• Rilegatura: Copertina rigida
• Numero di pagine: 339
• Redattore: Colinge Jean-Pierre
• Contatto del produttore: non disponibile
• Persona responsabile: CMN Printpool Inh. Mathis Neumann; https://www.also.com/ec/cms5/en_6000/6000/index.jsp; ; Friedrich-Karl-Str. 9; Hamburg; Germania