Sinossi
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
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Informazioni sull?autore
E. H. Nicollian (deceased) was a?researcher at AT&T Bell Laboratories, Murray Hill, NJ.
John R. Brews, currently Professor of Electrical Engineering, University of Arizona, Tucson AZ, was a researcher at AT&T Bell Laboratories, Murray Hill, NJ.
Dalla quarta di copertina
The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields. With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to future generations of mathematicians and scientists.
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Mos (Metal Oxide Semiconductor) Physics and Technology
Editore:
Wiley-Interscience, 2002
ISBN 10: 047143079X
ISBN 13: 9780471430797
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MOS (Metal Oxide Semiconductor) Physics and Technology
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PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000. Codice articolo FW-9780471430797
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MOS (Metal Oxide Semiconductor) Physics and Technology (Paperback)
Editore:
John Wiley & Sons Inc, New York, 2002
ISBN 10: 047143079X
ISBN 13: 9780471430797
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Paperback. Condizione: new. Paperback. Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability. This reference explores MOS (Metal Oxide Semiconductors) which are the ceramic semiconductors that are responsible for today's electronic revolution. These materials' ability to hold an electric charge allowed the transistor to replace the vacuum tube and paved the way for the miniaturization of electronic goods. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Codice articolo 9780471430797
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MOS (Metal Oxide Semiconductor) Physics and Technology
Editore:
John Wiley & Sons, 2002
ISBN 10: 047143079X
ISBN 13: 9780471430797
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Kartoniert / Broschiert. Condizione: New. The Wiley Classics Library consists of selected books that have become recognized classics in their respective fields. With these new unabridged and inexpensive editions, Wiley hopes to extend the life of these important works by making them available to fu. Codice articolo 556561164
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MOS (Metal Oxide Semiconductor) Physics and Technology (Paperback)
Editore:
John Wiley & Sons Inc, New York, 2002
ISBN 10: 047143079X
ISBN 13: 9780471430797
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Paperback. Condizione: new. Paperback. Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability. This reference explores MOS (Metal Oxide Semiconductors) which are the ceramic semiconductors that are responsible for today's electronic revolution. These materials' ability to hold an electric charge allowed the transistor to replace the vacuum tube and paved the way for the miniaturization of electronic goods. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Codice articolo 9780471430797
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MOS (Metal Oxide Semiconductor) Physics and Technology
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Condizione: New. pp. xv + 906 Illus. Codice articolo 7483451
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MOS (metal Oxide Semiconductor) Physics and Technology
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Condizione: New. This reference explores MOS (Metal Oxide Semiconductors) which are the ceramic semiconductors that are responsible for today's electronic revolution. These materials' ability to hold an electric charge allowed the transistor to replace the vacuum tube and paved the way for the miniaturization of electronic goods. Num Pages: 928 pages, illustrations. BIC Classification: PHFC; TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 235 x 157 x 51. Weight in Grams: 1384. . 2002. Paperback. . . . . Codice articolo V9780471430797
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MOS (Metal Oxide Semiconductor) Physics and Technology
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Condizione: New. pp. xv + 906. Codice articolo 26364516
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MOS (Metal Oxide Semiconductor) Physics and Technology
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Mos (Metal Oxide Semiconductor) Physics and Technology
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Taschenbuch. Condizione: Neu. Neuware - Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability. Codice articolo 9780471430797
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