Doping in III-V Semiconductors - Rilegato

Schubert, E. F.

Rilegato

ISBN 10: 0521419190 ISBN 13: 9780521419192

Casa editrice: Cambridge University Press, 1993

Riassunto

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.

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Recensione

"Fred Schubert has written a book that very nicely fills two roles: It serves as a reference volume for those of us who use III-V materials, and it provides enlightening explanations of interesting and important problems in semi-conductor physics....His lucid explanations of some of the important physics of doped semiconductors is a major strength." David L. Miller, Physics Today

Descrizione del libro

This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The various techniques and the key characteristics of dopants that are employed in III–V semiconductors are presented.

Su questa edizione

• Editore: Cambridge University Press
• Data di pubblicazione: 1993
• ISBN 10: 0521419190
• ISBN 13: 9780521419192
• Rilegatura: Copertina rigida
• Numero di pagine: 632