This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
Review of the hardback: '... a well-written and useful text ... a coherent review of the advanced state of power FET modelling and characterisation.' IEEE Microwave Magazine
This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.
Le informazioni nella sezione "Su questo libro" possono far riferimento a edizioni diverse di questo titolo.
EUR 4,00 per la spedizione in U.S.A.
Destinazione, tempi e costiEUR 6,18 per la spedizione in U.S.A.
Destinazione, tempi e costiDa: Feldman's Books, Menlo Park, CA, U.S.A.
Hardcover. Condizione: Very Fine. First Edition. No markings. Codice articolo 00044259
Quantità: 1 disponibili
Da: BennettBooksLtd, North Las Vegas, NV, U.S.A.
hardcover. Condizione: New. In shrink wrap. Looks like an interesting title! Codice articolo Q-0521870666
Quantità: 1 disponibili
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
Condizione: New. Codice articolo ABLIING23Feb2416190019447
Quantità: Più di 20 disponibili
Da: California Books, Miami, FL, U.S.A.
Condizione: New. Codice articolo I-9780521870665
Quantità: Più di 20 disponibili
Da: Revaluation Books, Exeter, Regno Unito
Hardcover. Condizione: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock. This item is printed on demand. Codice articolo __0521870666
Quantità: 1 disponibili
Da: Grand Eagle Retail, Fairfield, OH, U.S.A.
Hardcover. Condizione: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Codice articolo 9780521870665
Quantità: 1 disponibili
Da: Ria Christie Collections, Uxbridge, Regno Unito
Condizione: New. In. Codice articolo ria9780521870665_new
Quantità: Più di 20 disponibili
Da: THE SAINT BOOKSTORE, Southport, Regno Unito
Hardback. Condizione: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days 936. Codice articolo C9780521870665
Quantità: Più di 20 disponibili
Da: moluna, Greven, Germania
Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.Über . Codice articolo 446951506
Quantità: Più di 20 disponibili
Da: Majestic Books, Hounslow, Regno Unito
Condizione: New. Print on Demand pp. xv + 362 150 Figures, Illus. Codice articolo 7621125
Quantità: 4 disponibili