Sinossi
This book was the first to be devoted to the compact modeling of RF power FETs.
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
Recensione
Review of the hardback: '... a well-written and useful text ... a coherent review of the advanced state of power FET modelling and characterisation.' IEEE Microwave Magazine
Descrizione del libro
This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.
Le informazioni nella sezione "Su questo libro" possono far riferimento a edizioni diverse di questo titolo.
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Modeling and Characterization of RF and Microwave Power FETs
Editore:
Cambridge University Press, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Hardcover. Condizione: Good. No Jacket. Pages can have notes/highlighting. Spine may show signs of wear. ~ ThriftBooks: Read More, Spend Less. Codice articolo G0521870666I3N00
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Modeling and Characterization of RF and Microwave Power FETs
Editore:
Cambridge, Cambridge, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Hardcover. Condizione: Very Fine. First Edition. No markings. Codice articolo 00044259
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
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hardcover. Condizione: New. In shrink wrap. Looks like an interesting title! Codice articolo Q-0521870666
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
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Modeling and Characterization of RF and Microwave Power FETs (The Cambridge RF and Microwave Engineering Series)
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Modeling and Characterization of RF and Microwave Power FETs (Hardcover)
Editore:
Cambridge University Press, Cambridge, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Hardcover. Condizione: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. Codice articolo 9780521870665
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Modeling and Characterization of RF and Microwave Power FETs
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Hardcover. Condizione: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock. This item is printed on demand. Codice articolo __0521870666
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Modeling and Characterization of RF and Microwave Power FETs
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Hardback. Condizione: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days 936. Codice articolo C9780521870665
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Modeling and Characterization of RF and Microwave Power FETs (Hardcover)
Editore:
Cambridge University Press, Cambridge, 2007
ISBN 10: 0521870666
ISBN 13: 9780521870665
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Da: CitiRetail, Stevenage, Regno Unito
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Hardcover. Condizione: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Codice articolo 9780521870665
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