Structure and Properties of Dislocations in Semiconductors 1989, Proceedings of the 6th INT Symposium, Oxford, April 1989 - Rilegato

International Symposium On The Structure And Properties Of Dislocations In Semiconductors (6th : 1989 : University Of Oxford); Holt, D. B.; Roberts, S. G.; Wilshaw, P. R.

Rilegato

ISBN 10: 0854980601 ISBN 13: 9780854980604

Casa editrice: CRC Press, 1989

Riassunto

The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.

Su questo libro

Contenuti:

Structure of grain boundaries and dislocations(8 papers). Electronic effects of dislocations and associated point defects (24 papers). Dislocation mobility (10 papers). Dislocations, plasticity and fracture. Dislocations and device performance (9 papers). Author index. Subject index.

Su questa edizione

• Editore: CRC Press
• Data di pubblicazione: 1989
• ISBN 10: 0854980601
• ISBN 13: 9780854980604
• Rilegatura: Copertina rigida
• Numero edizione: 1
• Numero di pagine: 496
• Redattore: Wilshaw P. R.