Silicon Carbide And Related Materials 2003: Proceedings Of The 10th International Conference On Silicon Carbide And Related Materials 2003, Lyon, France, October 5-10, 2003: Volumes 457-460 - Rilegato

Rilegato

ISBN 10: 0878499431 ISBN 13: 9780878499434

Casa editrice: Trans Tech Pubn, 2004

Riassunto

Because of their many superior properties, including a wide band-gap and high breakdown field, which are different to those of conventional semiconductors such as Si and GaAs, compounds such as SiC, III-Nitrides and related materials are currently attracting increasing attention and are being targeted as possible solutions in a variety of problematic fields of electronic application: including high temperature, high power, radiation-resistant and microwave use. This two-volume edition records the written versions of 364 contributed papers and 26 invited talks, presented at the Tenth International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), held in Lyon, France, from the 5th to the 10th October, 2003. A total of 19 different countries were represented. These proceedings give the latest overview of the fundamental topics which currently drive the development of a competitive SiC technology. They cover bulk and epitaxial growth, the properties of the resultant substrates and layers, and the processing issues involved in developing SiC electronic devices applications.

Su questa edizione

• Editore: Trans Tech Pubn
• Data di pubblicazione: 2004
• ISBN 10: 0878499431
• ISBN 13: 9780878499434
• Rilegatura: Copertina rigida
• Numero di pagine: 1548
• Redattore: Madar Roland, Camassel Jean, Blanquet Ellisabeth