The Physics and Technology of Amorphous Sio2 - Brossura

Devine, Roderick A. B.

Brossura

ISBN 10: 1461283019 ISBN 13: 9781461283010

Casa editrice: Springer Verlag, 2011

Riassunto

The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under­ standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans­ port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.

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Contenuti:

Structure: Theory and Experiment.- Current Models for Amorphous SiO2.- Structural Similarities and Dissimilarities Between SiO2 and H2O.- Geometrical Methods in the Theory of Glasses.- Low Lying Excitations in Silica.- New Methods of IR Spectroscopic Investigation of Amorphous Insulating Films.- Vibrational Studies of Amorphous SiO2.- Raman Spectra of SiO2 Fibers at High Tensile Strain.- A Comparison of the Structure of a-SiO2 Prepared by Different Routes.- NMR Studies of Neutron-Irradiated Crystalline and Vitreous SiO2.- Intrinsic and Extrinsic Defects: Theory.- Electronic Structure of Defects in Amorphous SiO2.- Electron and Hole Traps Related to ? Bonded Oxygen Vacancy Centers in SiO2.- Theory of Oxygen-Vacancy Defects in Silicon Dioxide.- Total Energy Calculations for Intrinsic Defects in Amorphous SiO2.- Boron Impurity Centers in Si02: a Tight Binding Consideration.- Intrinsic and Extrinsic Defects: Experiment.- Intrinsic and Extrinsic Point Defects in a-SiO2.- Self-Trapped Excitons in Amorphous and Crystalline SiO2.- Identification of Native Defects in a-SiO2.- UV and VUV Optical Absorption due to Intrinsic and Laser Induced Defects in Synthetic Silica Fibers.- Incommensurate Phase of Quartz: Microscopic Origin and Interaction with Defects.- Gamma Ray Induced 2 eV Optical Absorption Band in Pure Silica Core Fibers.- On the Decay of X-Ray Induced Luminescence of SiO2.- On the Role of O-2 in the Luminescence of Amorphous and Crystalline SiO2.- Transformation of Radiation Induced Defect Centers as a Probe of Molecular Diffusion in a-SiO2.- Observation of the Neutral Oxygen Vacancy in Silicon Dioxide.- New Insight Into the Structure of SiO2 Glass from a Point Defect Study.- Hydrogen Bonds Between Peroxy Radicals and Hydrogen Molecules in SiO2 Glass.- ESR Studies of111< Si/SiO2 Interface.- Structure and Hyperfine Interaction of Si ? Si• Defect Clusters.- On the Relationship Between Thermal Growth and Thickness Inhomogeneities in Very Thin SiO2 Films.- The Pb Center at the Si-SiO2 Precipitate Interfaces in Buried Oxide Materials: 29Si Hyperfine Interactions and Linewidths.- Metastable and Multiply-Charged Individual Defects at the Si:SiO2 Interface.- The Influence of Disorder on the Si2p XPS Lineshape at the Si-SiO2 Interface.- Si-SiO2 Interfaces — a HRTEM Study.- Electrical and Interface Properties of MOS Structures of Getter Treated Silicon.- Influence of Different Preparation Methods on Interfacial (Si/SiO2) Parameters of Very Thin Layers.- Oxidation, Oxynitrides And Deposited Films.- Thermal Oxidation of Silicon.- A Framework for Incorporating Memory Effects of Structural Relaxation in Models for Thermal Oxidation of Silicon.- Analysis of Stress Relaxation and Growth Kinetics for Two-Step Thermal Oxidation of Silicon.- Photo-Induced Oxidation Processes in Silicon.- Growth and Structure of Argon Laser Grown SiO2.- Transport Properties of Plasma Enhanced CVD Silicon Oxynitride Films.- Characteristics of SiO2 and SiOxNy Obtained by Rapid Thermal Processes.- Evidence for Oxygen Bubbles in Fluorine Doped Amorphous Silicon Dioxide Thin Films.- Low Temperature PECVD Silicon Rich Silicon Dioxide Films Doped With Fluorine.- Transport, Trapping and Breakdown.- High Field Transport in SiO2.- Hot Electrons in SiO2: Ballistic and Steady State Transport.- Electronic Charge Transport in Thin SiO2 Films.- The Role of Hole Traps in the Degradation of Thermally Grown SiO2 Layers.- The Influence of Temperature Nitrogen Annealing on the Electrical Properties of Plasma Nitrided Oxides.- High-Field Positive-Charge Generation and Its Relation to Breakdown in a-SiO2.- Breakdown Mechanisms of Thermally Grown Silicon Dioxide at High Electric Fields.- Field Dependence of Time to Breakdown Distribution of Thin Oxides.- Radiation Effects.- Radiation Effects in MOS VLSI Structures.- Relationship Between Hole Trapping and Interface State Generation in the Si/SiO2 System.- Radiation Induced Conductivity of Thin Silicon Dioxide Films on Silicon.- Interface Degradation in Short Channel MOSFETs: Comparison Between the Effects of Radiation and Hot Carrier Injection.- Buried Dielectric Layers and Novel Applications.- Synthesis of Buried Dielectric Layers in Silica by Ion Implantation.- Electrical Properties of SIMOX Material and Device.- Formation Mechanisms and Structures of Thin Buried Layers of SiO2 Fabricated Using Ion Beam Synthesis.- Low Temperature ESR Study of SIMOX Structures.- Defects in Silicon-on-Insulator Structures Formed by O+ Implantation: Their Dependence on Implantation Temperature.- Interface Properties and Recombination Mechanisms in SIMOX Structures.- Porous Silica Sol-Gel Coatings for Nd: Glass High Power Pulsed Laser Laser Uses.- Vacuum Re-Emission of Positrons from a-SiO2 Layers.- Author Index.

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• Editore: Springer Verlag
• Data di pubblicazione: 2011
• ISBN 10: 1461283019
• ISBN 13: 9781461283010
• Rilegatura: Copertina flessibile
• Numero di pagine: 596