Gate Stack and Silicide Issues in Silicon: Volume 670 - Rilegato

9781558996069: Gate Stack and Silicide Issues in Silicon: Volume 670

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ISBN 10: 1558996060 ISBN 13: 9781558996069

Casa editrice: Cambridge University Press, 2002

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 2002.

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As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide.

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Editore: Cambridge University Press
Data di pubblicazione: 2002
Lingua: Inglese
ISBN 10: 1558996060
ISBN 13: 9781558996069
Rilegatura: Copertina rigida
Numero di pagine: 292
Redattore: Campbell S. A., Clevenger L. A., Griffin P. B., Hobbs C. C.
Contatto del produttore: non disponibile

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With illustrations. Stamped Damaged...

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9781107412194: Gate Stack and Silicide Issues in Silicon: Volume 670

Edizione in evidenza

ISBN 10: 1107412196 ISBN 13: 9781107412194
Casa editrice: Cambridge University Press, 2014
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Gate Stack and Silicide Issues in Silicon Processing II : Symposium Held April 17-19, 2001, San Francisco, California, U. S. A.

Campbel, S. A. , L. A. Clevenger, P. B. Griffin & C. C. Hobbs (editors)

Editore: Materials Research Society, Warrendale, Pennsylvania, 2002

ISBN 10: 1558996060 ISBN 13: 9781558996069

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Original Boards. Condizione: As New. Condizione sovraccoperta: No Dust Jacket. First Edition; First Edition. With illustrations. Stamped Damaged to verso title page. Otherwise new. ; Hardcover; Octavo; As technologists consider scaling microelectronic devices below the 100nm node, it is clear that many new materials will be introduced into the fab line. Determining the best materials and the best processing techniques are extremely challenging tasks. Much of this book, first published in 2002, attempts to find a replacement for silicon dioxide. Hafnium dioxide, zirconium dioxide, and their silicates and aluminates are the subjects of intense scrutiny, but other materials are being considered as well. Obtaining a suitable large capacitance, while simultaneously obtaining low charge density in the film, and finding a material that has adequate thermal stability is proving difficult. Real-time electron microscopy of metal-silicon reactions is providing valuable new insights. Topics include: high-K materials; processing of high-K gate dielectrics; gate stack and silicide issues in Si processing; electrical performance of novel gate dielectrics; novel gate structures; novel silicide processes; and shallow junctions and integration issues in FEOL. Codice articolo 21203

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