Hf-BASED HIGH-k DIELECTRICS: Process Development, Performance Characterization, and Reliability - Brossura

Young-Hee, Kim

Brossura

ISBN 10: 1598290045 ISBN 13: 9781598290042

Casa editrice: Morgan and Claypool Publishers, 2005

Riassunto

In this work, the reliability of HfO2 (hafnium oxide) with poly gate and dual metal gate electrode (Ru–Ta alloy, Ru) was investigated. Hard breakdown and soft breakdown, particularly the Weibull slopes, were studied under constant voltage stress. Dynamic stressing has also been used. It was found that the combination of trapping and detrapping contributed to the enhancement of the projected lifetime. The results from the polarity dependence studies showed that the substrate injection exhibited a shorter projected lifetime and worse soft breakdown behavior, compared to the gate injection. The origin of soft breakdown (first breakdown) was studied and the results suggested that the soft breakdown may be due to one layer breakdown in the bilayer structure (HfO2/SiO2: 4 nm/4 nm). Low Weibull slope was in part attributed to the lower barrier height of HfO2 at the interface layer. Interface layer optimization was conducted in terms of mobility, swing, and short channel effect using deep submicron MOSFET devices.

Su questo libro

Product Description:

Book by YoungHee Kim

Su questa edizione

• Editore: Morgan and Claypool Publishers
• Data di pubblicazione: 2005
• ISBN 10: 1598290045
• ISBN 13: 9781598290042
• Rilegatura: Copertina flessibile
• Numero di pagine: 102