Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics ― 2011: Volume 1335: Symposium Held April 25-29, 2011, San Francisco, California, U.s.a. - Rilegato

Rilegato

ISBN 10: 1605113123 ISBN 13: 9781605113128

Casa editrice: Materials Research Society, 2011

Riassunto

This volume includes papers from 'Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics' symposium, 2011 MRS Spring Meeting.

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Descrizione del libro

This volume includes selected papers based on the presentations given at Symposium O, 'Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics', held at the April 25-29, 2011 MRS Spring Meeting in San Francisco, California.

Contenuti

Part I. Low-k Materials: 1. Ultra low-k materials based on self-assembled organic polymers Marianna Pantouvaki; 2. New designs of hydrophobic and mesostructured ultra low k materials with isolated mesopores Anthony Grunenwald; 3. Evaluation of ultra-thin layer fabricated by wet-process as a pore-seal for porous low-k films Shoko Ono; 4. Ozone treatment on nanoporous ultralow dielectric materials to optimize their mechanical and dielectrical properties Hee-Woo Rhee; Part II. Integration: 5. Optimizing stressor film deposition sequence in polish rate order for best planarization John H. Zhang; 6. Effect of chemical solutions and surface wettability on the stability of advanced porous low-k materials Quoc Toan Le; 7. A less damaging patterning regime for a successful integration of ultra low-k materials in modern nanoelectronic devices Sven Zimmermann; 8. Defects in low-ĸ insulators (ĸ=2.5–2.0): ESR analysis and charge injection Valeri Afanas'ev; 9. Patterning organic fluorescent molecules with SAM patterns Nan Lu; 10. Optical interconnect technologies based on silicon photonics Wim Bogaerts; Part III. Metallization: 11. 32nm node highly reliable Cu/low-k integration technology with CuMn alloy seed Shaoning Yao; 12. Amorphous Ta-N as a diffusion barrier for Cu metallization Neda Dalili; 13. Comparison of TiN thin films grown on SiO2 by reactive dc magnetron sputtering and high power impulse magnetron sputtering Jon Gudmundsson; 14. Specific contact resistance of ohmic contacts on n-type SiC membranes Patrick Leech; 15. Development of electrochemical copper deposition screening methodologies for next generation additive selection Kevin Ryan; Part IV. 3D Packaging: 16. Microbump impact on reliability and performance in through-silicon via stacks Aditya Karmarkar; 17. Tailoring the crystallographic texture and electrical properties of inkjet-printed interconnects for use in microelectronics Romain Cauchois.

Dettagli dell'edizione

• Editore: Materials Research Society
• Data di pubblicazione: 2011
• Lingua: Inglese
• ISBN 10: 1605113123
• ISBN 13: 9781605113128
• Rilegatura: Copertina rigida
• Numero di pagine: 140
• Redattore: Baklanov Mikhail R., Dubois Geraud, Dussarrat Christian, Kokubo Terukazu, Ogawa Shinichi
• Contatto del produttore: non disponibile
• Persona responsabile: Avery; https://www.avery.fr/; ; chemin des peupliers 27; Dardilly; Francia