Descrizione libro Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. 248 pp. Englisch. Codice articolo 9783030085940

Informazioni sul venditore | Contatta il venditore

Compra nuovo

EUR 106,99

Convertire valuta

Aggiungere al carrello

Spese di spedizione: EUR 23,00

Da: Germania a: U.S.A.

Destinazione, tempi e costi

Foto dell'editore

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Integrated Circuits and Systems)

Editore: Springer (2019)

ISBN 10: 3030085945 ISBN 13: 9783030085940

Nuovo Brossura Quantit�: > 20

Da:

California Books
(Miami, FL, U.S.A.)

Valutazione libreria

Valutazione venditore:

Descrizione libro Condizione: New. Codice articolo I-9783030085940

Informazioni sul venditore | Contatta il venditore

Compra nuovo

EUR 137,60

Convertire valuta

Aggiungere al carrello

Spese di spedizione: GRATIS

In U.S.A.

Destinazione, tempi e costi

Immagini fornite dal venditore

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Meneghesso, Gaudenzio|Meneghini, Matteo|Zanoni, Enrico

Editore: Springer International Publishing (2019)

ISBN 10: 3030085945 ISBN 13: 9783030085940

Nuovo Brossura Quantit�: > 20

Print on Demand

Da:

moluna
(Greven, Germania)

Valutazione libreria

Valutazione venditore:

Descrizione libro Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiersDemonstrates how GaN is a superior technology for sw. Codice articolo 287285979

Informazioni sul venditore | Contatta il venditore

Compra nuovo

EUR 89,99

Convertire valuta

Aggiungere al carrello

Spese di spedizione: EUR 48,99

Da: Germania a: U.S.A.

Destinazione, tempi e costi

Immagini fornite dal venditore

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Gaudenzio Meneghesso

Editore: Springer International Publishing (2019)

ISBN 10: 3030085945 ISBN 13: 9783030085940

Nuovo Taschenbuch Quantit�: 1

Da:

AHA-BUCH GmbH
(Einbeck, Germania)

Valutazione libreria

Valutazione venditore:

Descrizione libro Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. Codice articolo 9783030085940

Informazioni sul venditore | Contatta il venditore

Compra nuovo

EUR 108,27

Convertire valuta

Aggiungere al carrello

Spese di spedizione: EUR 32,99

Da: Germania a: U.S.A.

Destinazione, tempi e costi

Foto dell'editore