Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion - Brossura

Brossura

ISBN 10: 3030085945 ISBN 13: 9783030085940

Casa editrice: Springer, 2019

Riassunto

Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the device level to circuit level, both for drivers and power conversions architectures

Demonstrates how GaN may be a superior technology for switching devices, enabling both high frequency and high efficiency power conversion

Enables design of smaller and more efficient power supplies

Su questo libro

Informazioni sull?autore

Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Dalla quarta di copertina

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

• Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
  
• Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;
  
• Enables design of smaller, cheaper and more efficient power supplies.

Dettagli dell'edizione

• Editore: Springer
• Data di pubblicazione: 2019
• Lingua: Inglese
• ISBN 10: 3030085945
• ISBN 13: 9783030085940
• Rilegatura: Copertina flessibile
• Numero di pagine: 248
• Redattore: Meneghesso Gaudenzio, Meneghini Matteo, Zanoni Enrico
• Contatto del produttore: non disponibile
• Persona responsabile: CMN Printpool Inh. Mathis Neumann; https://www.also.com/ec/cms5/en_6000/6000/index.jsp; ; Friedrich-Karl-Str. 9; Hamburg; Germania