MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch: 122 - Rilegato

Srivastava, Viranjay M.; Singh, Ghanshyam

Rilegato

ISBN 10: 3319011642 ISBN 13: 9783319011646

Casa editrice: Springer Nature, 2013

Riassunto

This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

Su questo libro

L'autore:

Dr. Viranjay M. Srivastava is an Assistant Professor at Jaypee University of Information Technology. Dr. Ghanshyam Singh is an Associate Professor at Jaypee University of Information Technology.

Contenuti:

Introduction.- Design of Double-Pole Four-Throw RF Switch.- Design of Double-Gate MOSFET.- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET.- Cylindrical Surrounding Double-Gate RF MOSFET.- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch.- Testing of MOSFET Surfaces Using Image Acquisition.- Conclusions and Future Scope.

Su questa edizione

• Editore: Springer Nature
• Data di pubblicazione: 2013
• ISBN 10: 3319011642
• ISBN 13: 9783319011646
• Rilegatura: Copertina rigida
• Numero di pagine: 199