Sinossi
Motivation.- Introduction to Gain-Cell Based eDRAMs (GC-eDRAMs).- GC-eDRAMs Operated at Scaled Supply Voltages.- Near-VT GC-eDRAM Implementations with Extended Retention Times.- Aggressive Technology and Voltage Scaling (to Sub-VT Domain).- Single-Supply 3T Gain-Cell for Low-Voltage Low-Power Applications.- 4T Gain-Cell with Internal-Feedback for Ultra-Low Retention Power at Scaled CMOS Nodes.- Multilevel GC-eDRAM (MLGC-eDRAM).- Soft Error Tolerant Low Power 4T Gain-Cell Array with Multi-Bit Error Detection and Correction.- Conclusions.
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