Descrizione libro Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. 248 pp. Englisch. Codice articolo 9783319779935

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Meneghesso, Gaudenzio|Meneghini, Matteo|Zanoni, Enrico

Editore: Springer International Publishing (2018)

ISBN 10: 3319779931 ISBN 13: 9783319779935

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moluna
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Descrizione libro Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiersDemonstrates how GaN is a superior technology for sw. Codice articolo 221458735

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Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Gaudenzio Meneghesso

Editore: Springer International Publishing (2018)

ISBN 10: 3319779931 ISBN 13: 9783319779935

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AHA-BUCH GmbH
(Einbeck, Germania)

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Descrizione libro Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. Codice articolo 9783319779935

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