Amorphous and Crystalline Silicon Carbide and Related Materials: Proceedings of the First International Conference, Washington DC, December 10 and 11, 1987 - Rilegato

Rilegato

ISBN 10: 354050706X ISBN 13: 9783540507062

Casa editrice: Springer-Verlag Berlin and Heidelberg GmbH & Co. K, 1989

Riassunto

Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.

Su questa edizione

• Editore: Springer-Verlag Berlin and Heidelberg GmbH & Co. K
• Data di pubblicazione: 1989
• ISBN 10: 354050706X
• ISBN 13: 9783540507062
• Rilegatura: Copertina rigida
• Numero edizione: 1
• Numero di pagine: 208
• Redattore: Harris Gary L, Yang Cary Y -W