Studies on Vanadium based Schottky Contacts to n-type Indium Phosphide - Brossura

Sankar Naik, S.; Rajagopal Reddy, V.

Brossura

ISBN 10: 3659378631 ISBN 13: 9783659378638

Casa editrice: LAP LAMBERT Academic Publishing, 2013

Riassunto

Indium phosphide (InP) with a direct band gap of 1.35 eV is a promising material for photovoltaic solar energy conversion. The high radiation resistance and potentially high efficiency make InP solar cells excellent candidates for eventually using in space. InP and its related compounds have found potential applications in the design of high speed devices such as field effect transistors and high electron mobility transistor (FET, HEMT), charge coupled devices, solar and integrated optoelectronic devices such as radiation detectors and chemical sensors. InP schottky diodes are of special interest because of its special properties such as large mobility required for high speed devices, optimum bandgap for photovoltaic conversion and radiation resistance for solar cells.

Su questo libro

L'autore:

S. Shankar Naik did doctorate from Sri Venkateswara University, Tirupati in 2013. He has authored of 12 research articles in reputed International Journals. His research interests are Ohmic and Schottky contacts to wide-bandgap semiconductors, Surface analysis of III-V and II-VI SCs, polymer based organic SCs and DLTS on SCs such as GaN and InP.

Su questa edizione

• Editore: LAP LAMBERT Academic Publishing
• Data di pubblicazione: 2013
• ISBN 10: 3659378631
• ISBN 13: 9783659378638
• Rilegatura: Copertina flessibile
• Numero di pagine: 164