This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
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Destinazione, tempi e costiDa: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs. 262 pp. Englisch. Codice articolo 9783866446151
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Da: AHA-BUCH GmbH, Einbeck, Germania
Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs. Codice articolo 9783866446151
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
Taschenbuch. Condizione: Neu. Neuware -This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.Books on Demand GmbH, Überseering 33, 22297 Hamburg 262 pp. Englisch. Codice articolo 9783866446151
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Da: preigu, Osnabrück, Germania
Taschenbuch. Condizione: Neu. AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications | Jutta Kühn | Taschenbuch | 262 S. | Englisch | 2014 | Karlsruher Institut für Technologie | EAN 9783866446151 | Verantwortliche Person für die EU: KIT Scientific Publishing, Straße am Forum 2, 76131 Karlsruhe, info[at]ksp[dot]kit[dot]edu | Anbieter: preigu. Codice articolo 105170314
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Da: Revaluation Books, Exeter, Regno Unito
Paperback. Condizione: Brand New. 262 pages. 8.27x5.83x0.62 inches. In Stock. Codice articolo 3866446152
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