Articoli correlati a Ti-Based Schottky Contacts to n-InP: Electronic Device...
- EditoreLAP LAMBERT Academic Publishing
- Data di pubblicazione2018
- ISBN 10 6139814928
- ISBN 13 9786139814923
- RilegaturaCopertina flessibile
- Numero di pagine148
Compra nuovo
Scopri di più su questo articolo
EUR 55,90
Spese di spedizione:
EUR 23,00
Da: Germania a: U.S.A.
I migliori risultati di ricerca su AbeBooks
Immagini fornite dal venditore
Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
Editore:
LAP LAMBERT Academic Publishing Apr 2018
(2018)
ISBN 10: 6139814928
ISBN 13: 9786139814923
Nuovo
Taschenbuch
Quantità: 2
Da:
Valutazione libreria
Descrizione libro Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development. 148 pp. Englisch. Codice articolo 9786139814923
Compra nuovo
EUR 55,90
Convertire valuta
Immagini fornite dal venditore
Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
Editore:
LAP LAMBERT Academic Publishing
(2018)
ISBN 10: 6139814928
ISBN 13: 9786139814923
Nuovo
Taschenbuch
Quantità: 1
Da:
Valutazione libreria
Descrizione libro Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In recent years, group III-V semiconductors have drawn considerable attention because they are technologically important as their electronic properties can be varied easily with different dopants. It also has a higher mobility, with a high peak-to-valley ratio in the velocity electric-field characteristics. These qualities are essential for high-speed microwave field-effect transistors, transferred electron oscillators and high-speed logics. The energy gap of InP is close to the optimum value for efficient conversion of solar radiation into electric power by single-junction photo voltaic cells. Metal-semiconductor (MS) structures play an important role in the device based on the III-V compound semiconductors in the form of Schottky barrier diodes (or) ohmic contacts. The fabrication of reliable and well-controlled electrical contacts is the key to the successful operation of almost all solid-state semiconductor devices. The continuous scaling of microelectronic devices to sub-microelectronic dimensions increases the need for high performance and rectifies contacts. Therefore, the formation of a high Schottky barrier height is an important research issue in InP device development. Codice articolo 9786139814923
Compra nuovo
EUR 56,57
Convertire valuta
Immagini fornite dal venditore
Ti-Based Schottky Contacts to n-InP: Electronic Device Applications
Editore:
LAP LAMBERT Academic Publishing
(2018)
ISBN 10: 6139814928
ISBN 13: 9786139814923
Nuovo
Brossura
Quantità: > 20
Da:
Valutazione libreria
Descrizione libro Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Rajagopal Reddy VarraProf. Reddy has published more than 190 articles in referred journals, and has been author or co-author of over 125 conference papers. Prof. Reddy has successfully guided 20 PhDs in the field of Advanced Electron. Codice articolo 385872134
Compra nuovo
EUR 46,18
Convertire valuta