This book describes the SRAM design concept in FinFET technologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs will be explored. Variety of SRAM design techniques will be presented exploiting the advantages of tied gate and independent gate controlled configurations. SRAM performance, power, and stability for FinFET devices are compared with conventional planar CMOS counterparts. Modeling the variability of FinFETs through statistics will be presented as well. The MOSFET device was compared with both Poly silicon and Molybdenum as gate material and the FinFET device was designed with different gate materials like Gold, Tungsten, Tantalum and Molybdenum and results were compared with Poly silicon gate material devices.
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Destinazione, tempi e costiDa: Books Puddle, New York, NY, U.S.A.
Condizione: New. Codice articolo 26394700788
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book describes the SRAM design concept in FinFET technologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs will be explored. Variety of SRAM design techniques will be presented exploiting the advantages of tied gate and independent gate controlled configurations. SRAM performance, power, and stability for FinFET devices are compared with conventional planar CMOS counterparts. Modeling the variability of FinFETs through statistics will be presented as well. The MOSFET device was compared with both Poly silicon and Molybdenum as gate material and the FinFET device was designed with different gate materials like Gold, Tungsten, Tantalum and Molybdenum and results were compared with Poly silicon gate material devices. 52 pp. Englisch. Codice articolo 9786202094283
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Da: Majestic Books, Hounslow, Regno Unito
Condizione: New. Print on Demand. Codice articolo 401676331
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Da: Biblios, Frankfurt am main, HESSE, Germania
Condizione: New. PRINT ON DEMAND. Codice articolo 18394700798
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Da: Revaluation Books, Exeter, Regno Unito
Paperback. Condizione: Brand New. 52 pages. 8.66x5.91x0.12 inches. In Stock. Codice articolo zk6202094281
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Da: moluna, Greven, Germania
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Murugesan ManikandanMr. M.Manikandan currently pursuing his Doctoral degree in the area of Photonics in Karunya University, Coimbatore. He has published 11 research article in International Journals including SCI Journals and 3 resea. Codice articolo 385926641
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
Taschenbuch. Condizione: Neu. Neuware -This book describes the SRAM design concept in FinFET technologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs will be explored. Variety of SRAM design techniques will be presented exploiting the advantages of tied gate and independent gate controlled configurations. SRAM performance, power, and stability for FinFET devices are compared with conventional planar CMOS counterparts. Modeling the variability of FinFETs through statistics will be presented as well. The MOSFET device was compared with both Poly silicon and Molybdenum as gate material and the FinFET device was designed with different gate materials like Gold, Tungsten, Tantalum and Molybdenum and results were compared with Poly silicon gate material devices.Books on Demand GmbH, Überseering 33, 22297 Hamburg 52 pp. Englisch. Codice articolo 9786202094283
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Da: AHA-BUCH GmbH, Einbeck, Germania
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book describes the SRAM design concept in FinFET technologies using unique features of non-planar double-gated devices. The parameter space required to design FinFETs will be explored. Variety of SRAM design techniques will be presented exploiting the advantages of tied gate and independent gate controlled configurations. SRAM performance, power, and stability for FinFET devices are compared with conventional planar CMOS counterparts. Modeling the variability of FinFETs through statistics will be presented as well. The MOSFET device was compared with both Poly silicon and Molybdenum as gate material and the FinFET device was designed with different gate materials like Gold, Tungsten, Tantalum and Molybdenum and results were compared with Poly silicon gate material devices. Codice articolo 9786202094283
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Da: preigu, Osnabrück, Germania
Taschenbuch. Condizione: Neu. Performance Enhancement of SRAM FINFET using different Gate materials | Manikandan Murugesan (u. a.) | Taschenbuch | 52 S. | Englisch | 2017 | LAP LAMBERT Academic Publishing | EAN 9786202094283 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. Codice articolo 110810749
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