Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures : Studied by Scanning Tunneling Microscopy and Spectroscopy

Lena Ivanova

ISBN 10: 3838111834 / ISBN 13: 9783838111834

Editore: Südwestdeutscher Verlag Für Hochschulschriften AG Co. KG, 2010

Riguardo questo articolo

nach der Bestellung gedruckt Neuware - Printed after ordering - Different nitrogen containing III-V semiconductor surfaces and nanostructures are studied using scanning tunneling microscopy and spectroscopy. In diluted GaAsN layers single nitrogen atoms can be identified. The measured density of states shows that nitrogen impurities lead to a splitting of the GaAs conduction band. The incorporation of nitrogen with a nominal concentration of 9% into InAs/GaAs QDs leads to a strong dissolution and the formation of extended spherical nitrogen-free InGaAs QDs with a low indium content. Furthermore, for the GaN(1-100) cleavage surface of epitaxially grown GaN substrates it is found that both the nitrogen and gallium derived intrinsic dangling bond surface states are outside of the fundamental bulk band gap. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step density, but not to intrinsic surface states. In GaN wafers dislocations are found to form localized bunches of entangled nonparallel dislocation lines. The charge and the Burgers vector of these dislocations are identified. Finally, an epitaxially grown silicon doping modulation structure is imaged.

Codice articolo 9783838111834

Dati bibliografici

• Titolo: Nitrogen Containing III-V Semiconductor Surfaces and Nanostructures : Studied by Scanning Tunneling Microscopy and Spectroscopy
• Editore: Südwestdeutscher Verlag Für Hochschulschriften AG Co. KG
• Data di pubblicazione: 2010
• Lingua: Inglese
• ISBN 10: 3838111834
• ISBN 13: 9783838111834
• Rilegatura: Taschenbuch
• Condizione: Neu
• Dimensioni: 220 L x 150 A x 10 P (millimetri) 220 millimetri di larghezza per 150 millimetri di altezza per 10 millimetri di profondità
• Peso: 233 grammi

Descrizione articolo

Riassunto

Different nitrogen containing III-V semiconductor surfaces and nanostructures are studied using scanning tunneling microscopy and spectroscopy. In diluted GaAsN layers single nitrogen atoms can be identified. The measured density of states shows that nitrogen impurities lead to a splitting of the GaAs conduction band. The incorporation of nitrogen with a nominal concentration of 9% into InAs/GaAs QDs leads to a strong dissolution and the formation of extended spherical nitrogen-free InGaAs QDs with a low indium content. Furthermore, for the GaN(1-100) cleavage surface of epitaxially grown GaN substrates it is found that both the nitrogen and gallium derived intrinsic dangling bond surface states are outside of the fundamental bulk band gap. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step density, but not to intrinsic surface states. In GaN wafers dislocations are found to form localized bunches of entangled nonparallel dislocation lines. The charge and the Burgers vector of these dislocations are identified. Finally, an epitaxially grown silicon doping modulation structure is imaged.

L'autore

Dr. Lena Ivanova, Institut für Festkörperphysik, Technische Universität Berlin