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Optimization and Characterization of GaN-Based High Electron Mobility Transistors

Haifeng Sun

ISBN 10: 3844006834 / ISBN 13: 9783844006834
Editore: Shaker Verlag Jan 2012, 2012
Nuovi Condizione: Neu Buch
Da Rhein-Team Lörrach Ivano Narducci e.K. (Lörrach, Germania)

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Neuware - Because of their outstanding combination of physical properties, GaN-based high-electron-mobility transistors (HEMTs) are very attractive components for highpower, high-speed, and high-temperature applications. This dissertation focuses on highly scaled GaN-based HEMTs for millimeter-wave frequencies. A device fabrication process for fully-passivated GaN HEMTs was developed. The two principal isolation technologies of mesa dry-etching and ion implantation were implemented and compared. Low resistance Ohmic contacts were achieved. The T-shaped gate process was implemented for GaN HEMTs, enabling the gate lengths shorter than 0.1 µm to be realized. High-performance AlGaN/GaN HEMTs grown on high-resistivity silicon (HR-Si) substrates were implemented. Multiple records were set for the switching speed of AlGaN/GaN HEMTs on silicon substrates: from 75 GHz, 90 GHz, and 114 GHz to a new record now of 130 GHz. These are to be contrasted to the previous published record of 27 GHz for a 0.1 µm GaN HEMT on Silicon: a near 5-fold improvement was achieved, proving the interest of GaN-on-Si for millimeter-wave applications. Our devices also feature a noise figure Fmin = 0.65 (1.2-1.3) dB and associated gain GA = 12 (9.3) dB at 10 (20) GHz. A comparison of the microwave small-signal performance of 0.1 µm HEMTs on HR-Si and on insulating sapphire was performed. The extracted small-signal equivalent circuit models revealed no differences attributable to the different substrates. This thesis has also defined the state-of-the-art performance on AlInN/GaN HEMTs. A record fT of 143 GHz and fMAX of 176 GHz were demonstrated for GaNon-Si HEMTs. An even higher fT of 205 GHz was achieved on SiC substrate, the highest ever reported for AlInN/GaN HEMTs to date. This is also the first demonstration of fT beyond 200 GHz on any GaN-based HEMTs. The microwave noise performance of AlInN/GaN HEMTs was also characterized for the first time. At 10 (20) GHz, our devices feature a noise figure Fmin = 0.62 (1.5) dB and associated gain GA = 15.4 (13.3) dB. The Fmin values are among the lowest reported in nitride HEMTs and the GA values are the best so far found in the literature. 165 pp. Englisch. Codice inventario libreria 9783844006834

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Titolo: Optimization and Characterization of ...

Casa editrice: Shaker Verlag Jan 2012

Data di pubblicazione: 2012

Legatura: Buch

Condizione libro:Neu