QUANTUM MECHANICAL EFFECTS ON MOSFET SCALINGLIMIT

Lihui Wang

Editore: VDM Verlag Jan 2009, 2009
ISBN 10: 3836461838 / ISBN 13: 9783836461832
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Neuware - As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process. 196 pp. Englisch. Codice inventario libreria

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Riassunto: As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process.

About the Author: Lihui Wang received the Ph.D. degree from the Georgia Institute of Technology in 2006. His doctoral research focused on the quantum mechanical effects in MOSFET devices. He is currently a Senior Device Engineer in National Semiconductor Corporation. His research interest is on-chip electrostatic discharge protection design.

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Titolo: QUANTUM MECHANICAL EFFECTS ON MOSFET ...
Casa editrice: VDM Verlag Jan 2009
Data di pubblicazione: 2009
Legatura: Taschenbuch
Condizione libro: Neu

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Descrizione libro Condizione libro: New. Publisher/Verlag: VDM Verlag Dr. Müller | Challenges and Opportunies for Nanoscale CMOS | As CMOS technology continuous to be aggressivelyscaled, it approaches a point where classical physicsis insufficient to explain the behavior of a MOSFET.At this classical physics limit, a quantum mechanicalmodel becomes necessary to provide thoroughassessment of the device performance and scaling.This book describes advanced modeling of nanoscalebulk MOSFETs incorporating critical quantummechanical effects such as gate direct tunneling andenergy quantization of carriers.The models derived here are used to project MOSFETscaling limits. These limits of bulk MOSFETs arepredicted according to various criteria, includingcircuit power and delay, device leakage current andthe system uniformity requirement. Tunneling andquantization effects cause large power dissipation,low drive current, and strong sensitivities toprocess variation, which greatly limit CMOS scaling.Developing new materials and structures is imminentto extend the scaling process. | Format: Paperback | Language/Sprache: english | 277 gr | 220x150x10 mm | 196 pp. Codice libro della libreria K9783836461832

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Lihui Wang
Editore: VDM Verlag Jan 2009 (2009)
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Descrizione libro VDM Verlag Jan 2009, 2009. Taschenbuch. Condizione libro: Neu. Neuware - As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process. 196 pp. Englisch. Codice libro della libreria 9783836461832

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Descrizione libro VDM Verlag Jan 2009, 2009. Taschenbuch. Condizione libro: Neu. Neuware - As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process. 196 pp. Englisch. Codice libro della libreria 9783836461832

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Descrizione libro VDM Verlag Jan 2009, 2009. Taschenbuch. Condizione libro: Neu. This item is printed on demand - Print on Demand Neuware - As CMOS technology continuous to be aggressively 196 pp. Englisch. Codice libro della libreria 9783836461832

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Descrizione libro VDM Verlag Dr. Müller, 2009. Paperback. Condizione libro: New. book. Codice libro della libreria 3836461838

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Descrizione libro VDM Verlag, Russian Federation, 2012. Paperback. Condizione libro: New. Language: English . Brand New Book. As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process. This book was created using print-on-demand technology. Codice libro della libreria KNV9783836461832

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