QUANTUM MECHANICAL EFFECTS ON MOSFET SCALINGLIMIT

Lihui Wang

Editore: VDM Verlag Jan 2009, 2009
ISBN 10: 3836461838 / ISBN 13: 9783836461832
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Neuware - As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process. 196 pp. Englisch. Codice inventario libreria

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Titolo: QUANTUM MECHANICAL EFFECTS ON MOSFET ...
Casa editrice: VDM Verlag Jan 2009
Data di pubblicazione: 2009
Legatura: Taschenbuch
Condizione libro: Neu

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Wang, Lihui
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Descrizione libro Condizione libro: New. Publisher/Verlag: VDM Verlag Dr. Müller | Challenges and Opportunies for Nanoscale CMOS | As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process. | Format: Paperback | Language/Sprache: english | 277 gr | 220x150x10 mm | 196 pp. Codice libro della libreria K9783836461832

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Lihui Wang
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Descrizione libro VDM Verlag Jan 2009, 2009. Taschenbuch. Condizione libro: Neu. 222x151x17 mm. This item is printed on demand - Print on Demand Neuware - As CMOS technology continuous to be aggressively 196 pp. Englisch. Codice libro della libreria 9783836461832

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Lihui Wang
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Descrizione libro VDM Verlag Jan 2009, 2009. Taschenbuch. Condizione libro: Neu. 222x151x17 mm. Neuware - As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process. 196 pp. Englisch. Codice libro della libreria 9783836461832

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Lihui Wang
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Descrizione libro VDM Verlag Jan 2009, 2009. Taschenbuch. Condizione libro: Neu. 222x151x17 mm. Neuware - As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process. 196 pp. Englisch. Codice libro della libreria 9783836461832

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Lihui Wang
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ISBN 10: 3836461838 ISBN 13: 9783836461832
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Descrizione libro VDM Verlag, Russian Federation, 2012. Paperback. Condizione libro: New. 222 x 151 mm. Language: English . Brand New Book. As CMOS technology continuous to be aggressively scaled, it approaches a point where classical physics is insufficient to explain the behavior of a MOSFET. At this classical physics limit, a quantum mechanical model becomes necessary to provide thorough assessment of the device performance and scaling. This book describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. The models derived here are used to project MOSFET scaling limits. These limits of bulk MOSFETs are predicted according to various criteria, including circuit power and delay, device leakage current and the system uniformity requirement. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process. This book was created using print-on-demand technology. Codice libro della libreria LIB9783836461832

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Editore: VDM Verlag Dr. Müller (2009)
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Descrizione libro VDM Verlag Dr. Müller, 2009. Paperback. Condizione libro: New. book. Codice libro della libreria 3836461838

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