Tunneling Field Effect Transistor Technology

Mansun Chan

ISBN 10: 3319316516 / ISBN 13: 9783319316512

Editore: Springer International Publishing, Springer International Publishing Apr 2016, 2016

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Neuware -This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs). Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 224 pp. Englisch.

Codice articolo 9783319316512

Dati bibliografici

• Titolo: Tunneling Field Effect Transistor Technology
• Editore: Springer International Publishing, Springer International Publishing Apr 2016
• Data di pubblicazione: 2016
• Lingua: Inglese
• ISBN 10: 3319316516
• ISBN 13: 9783319316512
• Rilegatura: Buch
• Condizione: Neu
• Dimensioni: 241 L x 160 A x 18 P (millimetri) 241 millimetri di larghezza per 160 millimetri di altezza per 18 millimetri di profondità
• Peso: 506 grammi

Descrizione articolo

Riassunto

This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs).  Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

Dalla quarta di copertina

This book provides a single-source reference tothe state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, theTFETs fabrication process and the important roles that TFETs will play inenabling integrated circuit designs for power efficiency. 

·        Provides comprehensive reference to tunneling field effecttransistors (TFETs);

·        Covers all aspects of TFETs, from device process to modeling andapplications;

·        Enables design of power-efficient integrated circuits, with lowpower consumption TFETs.