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EUR 23,00
Da: Germania a: U.S.A.
Descrizione libro Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -As CMOS technology continuous to be aggressivelyscaled, it approaches a point where classical physicsis insufficient to explain the behavior of a MOSFET.At this classical physics limit, a quantum mechanicalmodel becomes necessary to provide thoroughassessment of the device performance and scaling.This book describes advanced modeling of nanoscalebulk MOSFETs incorporating critical quantummechanical effects such as gate direct tunneling andenergy quantization of carriers.The models derived here are used to project MOSFETscaling limits. These limits of bulk MOSFETs arepredicted according to various criteria, includingcircuit power and delay, device leakage current andthe system uniformity requirement. Tunneling andquantization effects cause large power dissipation,low drive current, and strong sensitivities toprocess variation, which greatly limit CMOS scaling.Developing new materials and structures is imminentto extend the scaling process. 196 pp. Englisch. Codice articolo 9783836461832
Descrizione libro Kartoniert / Broschiert. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Wang LihuiLihui Wang received the Ph.D. degree from the Georgia Institutenof Technology in 2006. His doctoral research focused on thenquantum mechanical effects in MOSFET devices. He is currently anSenior Device Engineer in National . Codice articolo 5387176
Descrizione libro Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - As CMOS technology continuous to be aggressivelyscaled, it approaches a point where classical physicsis insufficient to explain the behavior of a MOSFET.At this classical physics limit, a quantum mechanicalmodel becomes necessary to provide thoroughassessment of the device performance and scaling.This book describes advanced modeling of nanoscalebulk MOSFETs incorporating critical quantummechanical effects such as gate direct tunneling andenergy quantization of carriers.The models derived here are used to project MOSFETscaling limits. These limits of bulk MOSFETs arepredicted according to various criteria, includingcircuit power and delay, device leakage current andthe system uniformity requirement. Tunneling andquantization effects cause large power dissipation,low drive current, and strong sensitivities toprocess variation, which greatly limit CMOS scaling.Developing new materials and structures is imminentto extend the scaling process. Codice articolo 9783836461832
Descrizione libro Paperback. Condizione: Brand New. 196 pages. 8.50x5.91x0.63 inches. This item is printed on demand. Codice articolo zk3836461838