Da: Feldman's Books, Menlo Park, CA, U.S.A.
Prima edizione
Hardcover. Condizione: Very Fine. First Edition. No markings.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 95,87
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Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
EUR 94,69
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Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: California Books, Miami, FL, U.S.A.
EUR 106,51
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Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 106,34
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Cambridge University Press, Cambridge, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Paperback. Condizione: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 100,11
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Lingua: Inglese
Editore: Cambridge University Press 2011-06-30, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Chiron Media, Wallingford, Regno Unito
EUR 100,37
Quantità: 10 disponibili
Aggiungi al carrelloPaperback. Condizione: New.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 117,55
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Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 102,23
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Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 113,32
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: BennettBooksLtd, San Diego, NV, U.S.A.
hardcover. Condizione: New. In shrink wrap. Looks like an interesting title!
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 133,27
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 124,20
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Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
EUR 140,03
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Lingua: Inglese
Editore: Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Rarewaves.com USA, London, LONDO, Regno Unito
EUR 145,43
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Aggiungi al carrelloPaperback. Condizione: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 135,30
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 148,79
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Aggiungi al carrelloCondizione: New. In.
Lingua: Inglese
Editore: Cambridge University Press, Cambridge, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Hardcover. Condizione: new. Hardcover. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: Revaluation Books, Exeter, Regno Unito
EUR 174,08
Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 266 pages. 9.75x7.00x0.50 inches. In Stock.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 137,04
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This 2007 book was the first to be devoted to the compact modeling of RF power FETs.
Lingua: Inglese
Editore: Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Rarewaves.com UK, London, Regno Unito
EUR 136,89
Quantità: Più di 20 disponibili
Aggiungi al carrelloPaperback. Condizione: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Da: Revaluation Books, Exeter, Regno Unito
EUR 210,63
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Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock.
Lingua: Inglese
Editore: Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 198,73
Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: Revaluation Books, Exeter, Regno Unito
EUR 96,67
Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. 1st edition. 378 pages. 9.50x6.70x0.90 inches. In Stock. This item is printed on demand.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: THE SAINT BOOKSTORE, Southport, Regno Unito
EUR 102,24
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Aggiungi al carrelloPaperback / softback. Condizione: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.
Lingua: Inglese
Editore: Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Da: Revaluation Books, Exeter, Regno Unito
EUR 128,24
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 266 pages. 9.75x7.00x0.50 inches. In Stock. This item is printed on demand.
Lingua: Inglese
Editore: Cambridge University Press, Cambridge, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: CitiRetail, Stevenage, Regno Unito
EUR 111,00
Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Da: moluna, Greven, Germania
EUR 110,59
Quantità: Più di 20 disponibili
Aggiungi al carrelloKartoniert / Broschiert. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples.Inhaltsver.
Da: Revaluation Books, Exeter, Regno Unito
EUR 158,47
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock. This item is printed on demand.