Lingua: Inglese
Editore: Cambridge University Press CUP, 2011
ISBN 10: 1605112763 ISBN 13: 9781605112763
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. pp. ix + 207.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 1605112763 ISBN 13: 9781605112763
Da: Majestic Books, Hounslow, Regno Unito
EUR 22,36
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: New. pp. ix + 207 143 Illus.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 1605112763 ISBN 13: 9781605112763
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 23,10
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: New. pp. ix + 207.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 1605112763 ISBN 13: 9781605112763
Da: Basi6 International, Irving, TX, U.S.A.
Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 1605112763 ISBN 13: 9781605112763
Da: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.
Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Lingua: Inglese
Editore: Cambridge University Press, 2014
ISBN 10: 1107406838 ISBN 13: 9781107406834
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
EUR 34,00
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: Cambridge University Press, 2011
ISBN 10: 1605112763 ISBN 13: 9781605112763
Da: ALLBOOKS1, Direk, SA, Australia
EUR 40,72
Quantità: 3 disponibili
Aggiungi al carrelloBrand new book. Fast ship. Please provide full street address as we are not able to ship to P O box address.
Lingua: Inglese
Editore: Cambridge University Press, Cambridge, 2014
ISBN 10: 1107406838 ISBN 13: 9781107406834
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Paperback. Condizione: new. Paperback. Symposium S, 'Microelectromechanical Systems - Materials and Devices IV', held November 29December 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts, focused on micro- and nanoelectromechanical systems (MEMS/NEMS), technologies which were spawned from the fabrication and integration of small-scale mechanical, electrical, thermal, magnetic, fluidic and optical sensors and actuators with micro-electronic components. MEMS and NEMS have enabled performance enhancements and manufacturing cost reductions in a number of applications, including optical displays, acceleration sensing, radio-frequency switching, drug delivery, chemical detection and power generation and storage. Although originally based on silicon microelectronics, the reach of MEMS and NEMS has extended well beyond traditional engineering materials and now includes nanomaterials (nanotubes, nanowires, nanoparticles), smart materials (piezoelectric and ferroelectric materials, shape memory alloys, pH-sensitive polymers), metamaterials and biomaterials (ceramic, metallic, polymeric, composite-based implant materials). While these new materials provide more freedom with regards to the design space of MEMS and NEMS, they also introduce a number of new fabrication and characterization challenges not previously encountered with silicon-based technology. Symposium S, 'Microelectromechanical Systems - Materials and Devices IV', focused on micro- and nanoelectromechanical systems (MEMS/NEMS). Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Da: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.
Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Condizione: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.
Lingua: Inglese
Editore: Cambridge University Press, 2014
ISBN 10: 1107406838 ISBN 13: 9781107406834
Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 35,60
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
Lingua: Inglese
Editore: Cambridge University Press 2014-06-05, 2014
ISBN 10: 1107406838 ISBN 13: 9781107406834
Da: Chiron Media, Wallingford, Regno Unito
EUR 34,32
Quantità: 10 disponibili
Aggiungi al carrelloPaperback. Condizione: New.
Da: ALLBOOKS1, Direk, SA, Australia
EUR 54,15
Quantità: 5 disponibili
Aggiungi al carrelloBrand new book. Fast ship. Please provide full street address as we are not able to ship to P O box address.
Lingua: Inglese
Editore: Cambridge University Press CUP, 2014
ISBN 10: 1107406838 ISBN 13: 9781107406834
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. pp. 220.
Lingua: Inglese
Editore: Dordrecht, Springer Netherland., 2006
ISBN 10: 140204366X ISBN 13: 9781402043666
Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, Germania
EUR 30,00
Quantità: 1 disponibili
Aggiungi al carrello16 x 23 cm. XII, 492 S. XI, 492 p. Softcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. (NATO Science Series II: Mathematics, Physics and Chemistry). Sprache: Englisch.
Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
Da: Romtrade Corp., STERLING HEIGHTS, MI, U.S.A.
Condizione: New. This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide.
Da: ALLBOOKS1, Direk, SA, Australia
EUR 117,06
Quantità: 1 disponibili
Aggiungi al carrelloBrand new book. Fast ship. Please provide full street address as we are not able to ship to P O box address.
Lingua: Inglese
Editore: Cambridge University Press, 2014
ISBN 10: 1107406838 ISBN 13: 9781107406834
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 53,05
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Symposium S, 'Microelectromechanical Systems - Materials and Devices IV', held November 29-December 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts, focused on micro- and nanoelectromechanical systems (MEMS/NEMS), technologies which were spawned from the fabrication and integration of small-scale mechanical, electrical, thermal, magnetic, fluidic and optical sensors and actuators with micro-electronic components. MEMS and NEMS have enabled performance enhancements and manufacturing cost reductions in a number of applications, including optical displays, acceleration sensing, radio-frequency switching, drug delivery, chemical detection and power generation and storage. Although originally based on silicon microelectronics, the reach of MEMS and NEMS has extended well beyond traditional engineering materials and now includes nanomaterials (nanotubes, nanowires, nanoparticles), smart materials (piezoelectric and ferroelectric materials, shape memory alloys, pH-sensitive polymers), metamaterials and biomaterials (ceramic, metallic, polymeric, composite-based implant materials). While these new materials provide more freedom with regards to the design space of MEMS and NEMS, they also introduce a number of new fabrication and characterization challenges not previously encountered with silicon-based technology.
Condizione: New. pp. 378.
EUR 120,13
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. pp. 378 Illus.
Da: ALLBOOKS1, Direk, SA, Australia
EUR 130,23
Quantità: 1 disponibili
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Hardcover. Condizione: Very Good. AS NEW: Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices HC 1998 Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices (NATO Science Partnership Subseries: 3, 47) 1998th Edition by Eric Garfunkel (Editor), Evgeni Gusev (Editor), Alexander Vul' (Editor) OUR REFERENCE:128B3-0792350073-HC-2P2-lb-Wht-B45 DESCRIPTION An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science. Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology. Product details Publisher ‏ : ‎ Springer; 1998th edition (March 31, 1998) Language ‏ : ‎ English Hardcover ‏ : ‎ 518 pages ISBN-10 ‏ : ‎ 0792350073 ISBN-13 ‏ : ‎ 978-0792350071.
EUR 122,64
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. pp. 378.
Da: Buchpark, Trebbin, Germania
EUR 30,00
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Sehr gut. Zustand: Sehr gut | Seiten: 508 | Sprache: Englisch | Produktart: Bücher | The goal of this NATO Advanced Research Workshop (ARW) entitled ¿Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices¿, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
Da: Phatpocket Limited, Waltham Abbey, HERTS, Regno Unito
EUR 146,84
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Good. Your purchase helps support Sri Lankan Children's Charity 'The Rainbow Centre'. Ex-library, so some stamps and wear, but in good overall condition. Our donations to The Rainbow Centre have helped provide an education and a safe haven to hundreds of children who live in appalling conditions.
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
EUR 158,01
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
EUR 158,01
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.