Hardcover. Condizione: Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover!
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Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 53,94
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPrices, Columbia, MD, U.S.A.
EUR 54,87
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Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Rarewaves.com USA, London, LONDO, Regno Unito
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Aggiungi al carrelloPaperback. Condizione: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Rarewaves USA, OSWEGO, IL, U.S.A.
EUR 63,87
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Aggiungi al carrelloPaperback. Condizione: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 56,47
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Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: GreatBookPricesUK, Woodford Green, Regno Unito
EUR 57,01
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Aggiungi al carrelloCondizione: As New. Unread book in perfect condition.
Editore: Library stamps/marks on first free endpapers and titelpage. Text clean. World Scientific.
Da: Antiquariaat Ovidius, Bredevoort, Paesi Bassi
EUR 24,00
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Aggiungi al carrelloCondizione: Gebraucht / Used. 1986. Hardcover. xv,222pp.
Lingua: Inglese
Editore: World Scientific Pub Co Inc, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Revaluation Books, Exeter, Regno Unito
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Aggiungi al carrelloPaperback. Condizione: Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.
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Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Rarewaves USA United, OSWEGO, IL, U.S.A.
EUR 64,98
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Aggiungi al carrelloPaperback. Condizione: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
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Lingua: Inglese
Editore: World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Rarewaves.com UK, London, Regno Unito
EUR 56,46
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Aggiungi al carrelloPaperback. Condizione: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
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Aggiungi al carrelloPaperback. Condizione: Brand New. 238 pages. 9.00x6.50x0.75 inches. In Stock.
Lingua: Inglese
Editore: WORLD SCIENTIFIC PUB CO INC, 1987
ISBN 10: 9971501422 ISBN 13: 9789971501426
Da: Buchpark, Trebbin, Germania
EUR 66,46
Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Gut. Zustand: Gut | Sprache: Englisch | Produktart: Bücher | This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Lingua: Inglese
Editore: World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 152,50
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Aggiungi al carrellopaperback. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Lingua: Inglese
Editore: WORLD SCIENTIFIC PUB CO INC, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Da: moluna, Greven, Germania
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Aggiungi al carrelloKartoniert / Broschiert. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Klappentext.
Lingua: Inglese
Editore: WORLD SCIENTIFIC PUB CO INC, 1987
ISBN 10: 9971501422 ISBN 13: 9789971501426
Da: moluna, Greven, Germania
EUR 79,61
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt.