Tipo di articolo
Condizioni
Legatura
Ulteriori caratteristiche
Paese del venditore
Valutazione venditore
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: booksXpress, Bayonne, NJ, U.S.A.
Libro
Soft Cover. Condizione: new.
Editore: Springer 2019-01, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: Chiron Media, Wallingford, Regno Unito
Libro
PF. Condizione: New.
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: GF Books, Inc., Hawthorne, CA, U.S.A.
Libro
Condizione: Fine. Book is in Used-LikeNew condition. Pages and cover are clean and intact. Used items may not include supplementary materials such as CDs or access codes. May show signs of minor shelf wear. 0.85.
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: Ria Christie Collections, Uxbridge, Regno Unito
Libro Print on Demand
Condizione: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
Libro
Condizione: New.
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: Books Puddle, New York, NY, U.S.A.
Libro
Condizione: New. pp. XIII, 232 183 illus., 165 illus. in color. 1 Edition NO-PA16APR2015-KAP.
Editore: Springer International Publishing Jan 2019, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Libro Print on Demand
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. 248 pp. Englisch.
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: Books Unplugged, Amherst, NY, U.S.A.
Libro
Condizione: New. Buy with confidence! Book is in new, never-used condition 0.85.
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: California Books, Miami, FL, U.S.A.
Libro
Condizione: New.
Editore: Springer International Publishing, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: moluna, Greven, Germania
Libro Print on Demand
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiersDemonstrates how GaN is a superior technology for sw.
Editore: Springer International Publishing, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: AHA-BUCH GmbH, Einbeck, Germania
Libro
Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies.
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: Kennys Bookshop and Art Galleries Ltd., Galway, GY, Irlanda
Libro
Condizione: New. 2019. Paperback. . . . . .
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: Mispah books, Redhill, SURRE, Regno Unito
Libro
Paperback. Condizione: New. New. book.
Editore: Springer, 2019
ISBN 10: 3030085945ISBN 13: 9783030085940
Da: Kennys Bookstore, Olney, MD, U.S.A.
Libro
Condizione: New. 2019. Paperback. . . . . . Books ship from the US and Ireland.