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Editore: Springer Berlin, 1984
ISBN 10: 3540935045ISBN 13: 9783540935049
Da: Antiquariat Bookfarm, Löbnitz, Germania
Libro
Hardcover. XIV, 314 S. : 106 Ill. u. graph. Darst. Ehemaliges Bibliotheksexemplar mit Signatur und Stempel. Moderate Gebrauchsspuren, guter Zustand. 9783540935049 Sprache: Englisch Gewicht in Gramm: 550.
Editore: Springer, 1984
ISBN 10: 3540935045ISBN 13: 9783540935049
Da: Roland Antiquariat UG haftungsbeschränkt, Weinheim, Germania
Libro
Gebundene Ausgabe. 8. XIV, 314 S. Guter Zustand. Leseseiten sind sauber und ohne Markierungen. Ausgeschiedenes Bibliotheksexemplar mit entsprechender Kennzeichnung. Buch weist leichte Lager- bzw. Gebrauchsspuren auf. Sonst ordentliches Exemplar. 9783540935049 Sprache: Deutsch Gewicht in Gramm: 920.
Editore: Berlin, Springer Vlg, 1984
Da: Antiquariat Thomas Haker GmbH & Co. KG, Berlin, Germania
Membro dell'associazione: GIAQ
Libro
Hardcover/Pappeinband. 314 S. Very good condition. Ex-Library. Sprache: Englisch Gewicht in Gramm: 1030.
Editore: LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3843374082ISBN 13: 9783843374088
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
Libro
Condizione: New.
Editore: LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3843374082ISBN 13: 9783843374088
Da: PBShop.store US, Wood Dale, IL, U.S.A.
Libro Print on Demand
PAP. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Editore: LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3843374082ISBN 13: 9783843374088
Da: AHA-BUCH GmbH, Einbeck, Germania
Libro Print on Demand
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Si-based microelectronic community is experiencing a sort of revolution, in order to meet the scaling rate demanded by high-tech industries. Shallow p-type junctions with high active dopant concentrations are needed. The F capability in helping the B confinement in Si is widely recognized, even if there is not a general consensus on the physical mechanisms acting. Different mechanisms have been proposed: a chemical bonding between F and B; or a F interaction with point defects, through the formation of F-I (interstitial) or F-V (vacancy) complexes. This thesis investigates the F behaviour in pre-amorphized Si, opening a new route towards the F profile engineering. F is shown to strongly modify Is and Vs population, inducing an Is undersaturation or a Vs supersaturation. Such effect is transient, because strictly correlated to the transient presence of F in the Si samples. Our results allow a point defect engineering by means of F, ruling out the F-B chemical bonding as the responsible for B diffusion reduction by F, and suggesting the F-V bonding as the key mechanism governing the F behaviour in pre-amorphized Si and its capability in controlling the point defect population.
Editore: LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3843374082ISBN 13: 9783843374088
Da: PBShop.store UK, Fairford, GLOS, Regno Unito
Libro Print on Demand
PAP. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Editore: Südwestdeutscher Verlag für Hochschulschriften, 2009
ISBN 10: 3838109716ISBN 13: 9783838109718
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
Libro
Condizione: New.
Editore: Südwestdeutscher Verlag Für Hochschulschriften Aug 2009, 2009
ISBN 10: 3838109716ISBN 13: 9783838109718
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Libro Print on Demand
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Solar cells based on monocrystalline silicon (c-Si) can potentially achieve high sunlight energy conversion efficiencies and thus could reach grid parity despite the high cost of c-Si. The efficiency of standard c-Si solar cells featuring diffused emitters and aluminum back surface fields (BSF) is limited by interface recombination. Alternatively the growth of intrinsic/doped amorphous silicon (a- Si:H) layer stacks on c-Si effectively passivates the c-Si surface and simultaneously forms the emitter and BSF. Such Si heterojunction (HJ) solar cells can use thin c-Si wafers, benefit from low production cost of a-Si:H layers and enable the highest efficiencies. The focus of this work is the study of interfaces in a-Si:H/c-Si heterostructures, particularly the electronic quality of the a-Si:H/c-Si heterointerface and its effect on the subsequent a- Si:H/c-Si HJ solar cell fabrication. Interface recombination modeling by considering the amphoteric nature of Si dangling bonds is in excellent agreement with measurements, and provides insight into the microscopic passivation mechanisms. 252 pp. Deutsch.
Editore: Südwestdeutscher Verlag für Hochschulschriften, 2009
ISBN 10: 3838109716ISBN 13: 9783838109718
Da: Ria Christie Collections, Uxbridge, Regno Unito
Libro Print on Demand
Condizione: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Editore: Sudwestdeutscher Verlag fur Hochschulschrifte 2009-09, 2009
ISBN 10: 3838109716ISBN 13: 9783838109718
Da: Chiron Media, Wallingford, Regno Unito
Libro
PF. Condizione: New.
Editore: Südwestdeutscher Verlag Für Hochschulschriften, 2009
ISBN 10: 3838109716ISBN 13: 9783838109718
Da: AHA-BUCH GmbH, Einbeck, Germania
Libro Print on Demand
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Solar cells based on monocrystalline silicon (c-Si) can potentially achieve high sunlight energy conversion efficiencies and thus could reach grid parity despite the high cost of c-Si. The efficiency of standard c-Si solar cells featuring diffused emitters and aluminum back surface fields (BSF) is limited by interface recombination. Alternatively the growth of intrinsic/doped amorphous silicon (a- Si:H) layer stacks on c-Si effectively passivates the c-Si surface and simultaneously forms the emitter and BSF. Such Si heterojunction (HJ) solar cells can use thin c-Si wafers, benefit from low production cost of a-Si:H layers and enable the highest efficiencies. The focus of this work is the study of interfaces in a-Si:H/c-Si heterostructures, particularly the electronic quality of the a-Si:H/c-Si heterointerface and its effect on the subsequent a- Si:H/c-Si HJ solar cell fabrication. Interface recombination modeling by considering the amphoteric nature of Si dangling bonds is in excellent agreement with measurements, and provides insight into the microscopic passivation mechanisms.
Editore: LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3843374082ISBN 13: 9783843374088
Da: Mispah books, Redhill, SURRE, Regno Unito
Libro
Paperback. Condizione: Like New. Like New. book.
Editore: Berlin, Springer, 1984
ISBN 10: 3540935045ISBN 13: 9783540935049
Da: Antiquariat Braun, Gengenbach, Germania
Libro
Gebundene Ausgabe. Condizione: Sehr gut. 25 x 17,5 cm. XIV, 314 Seiten. *Stempel auf der Titelrückseite. Unbenutzte Bibliotheksdublette in neuwertigem Zustand. ISBN 3540935045 Sprache: Englisch Gewicht in Gramm: 1000.
Editore: Südwestdeutscher Verlag für Hochschulschriften, 2009
ISBN 10: 3838109716ISBN 13: 9783838109718
Da: moluna, Greven, Germania
Libro Print on Demand
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Solar cells based on monocrystalline silicon (c-Si) can potentially achieve high sunlight energy conversion efficiencies and thus could reach grid parity despite the high cost of c-Si. The efficiency of standard c-Si solar cells featuring diffused emitters .
Editore: InTechOpen, 2011
ISBN 10: 9533075872ISBN 13: 9789533075877
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
Libro
Condizione: New.
Editore: In Tech, 2011
ISBN 10: 9533075872ISBN 13: 9789533075877
Da: PBShop.store US, Wood Dale, IL, U.S.A.
Libro Print on Demand
HRD. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Editore: IntechOpen, 2011
ISBN 10: 9533075872ISBN 13: 9789533075877
Da: Ria Christie Collections, Uxbridge, Regno Unito
Libro Print on Demand
Condizione: New. PRINT ON DEMAND Book; New; Fast Shipping from the UK. No. book.
Editore: IntechOpen, 2011
ISBN 10: 9533075872ISBN 13: 9789533075877
Da: PBShop.store UK, Fairford, GLOS, Regno Unito
Libro Print on Demand
HRD. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Editore: Intechopen, 2011
ISBN 10: 9533075872ISBN 13: 9789533075877
Da: AHA-BUCH GmbH, Einbeck, Germania
Libro Print on Demand
Buch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices.
Editore: InTechOpen, 2011
ISBN 10: 9533075872ISBN 13: 9789533075877
Da: dsmbooks, Liverpool, Regno Unito
Libro
paperback. Condizione: New. New. book.
Editore: The Institution of Engineering and Technology, 1999
ISBN 10: 0852969333ISBN 13: 9780852969335
Da: Salish Sea Books, Bellingham, WA, U.S.A.
Libro
Condizione: Very Good. Very Good; Hardcover; Covers are still glossy with a few minor scratches to the back cover; Unblemished textblock edges; The endpapers and all text pages are clean and unmarked; The binding is excellent with a straight spine; This book will be shipped in a sturdy cardboard box with foam padding; Large Format (Quatro, 10.75" - 11.75" tall); Heavy (6.7 lbs); Orange covers with title in white lettering; 1999, The Institution of Engineering and Technology; 1042 pages; "Properties of Crystalline Silicon (Emis Series)," by R. Hull.
Editore: The Institution of Engineering and Technology, 1999
ISBN 10: 0852969333ISBN 13: 9780852969335
Da: Salish Sea Books, Bellingham, WA, U.S.A.
Libro
Hardcover. Condizione: Good. 0852969333 Good; Hardcover; Withdrawn library copy with the standard library markings; Moderate wear to the covers; Library stamps to the endpapers; Text pages are clean & unmarked; The binding is good with a straight spine; This book will be stored and delivered in a sturdy cardboard box with foam padding; Large Format (Quatro, 10.75" - 11.75" tall); Heavy (6.7 lbs); Orange covers with title in white lettering; 1999, The Institution of Engineering and Technology; 1042 pages; "Properties of Crystalline Silicon (Emis Series)," by R. Hull.