Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology.
The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
Chenming Hu is TSMC Distinguished Chair Professor Emeritus at the University of California Berkeley, United States. He was the Chief Technology Officer of TSMC. He received the US Presidential Medal of Technology and Innovation from Pres. Barack Obama for developing the first 3D thin-body transistor FinFET, MOSFET reliability models and leading the development of BSIM industry standard transistor model that is used in designing most of the integrated circuits in the world. He is a member of the US Academy of Engineering, the Chinese Academy of Science, and Academia Sinica. He received the highest honor of IEEE, the IEEE Medal of Honor, and its Andrew Grove Award, Solid Circuits Award, and the Nishizawa Medal. He also received the Taiwan Presidential Science Prize and UC Berkeley’s highest honor for teaching – the Berkeley Distinguished Teaching Award.
Sourabh Khandelwal is an Associate Professor at Macquarie University. He is the lead author of two industry standard compact models: ASM-HEMT for GaN RF and power technology, and ASM-ESD for silicon ESD applications. He has also co-authored BSIM-CMG, BSIM-IMG and BSIM6 compact models during his tenure at the BSIM group at the University of California Berkeley. Dr Khandelwal has published 3 books and over 150 research papers. He regularly serves as consultant to multi-national semiconductor companies.
Yogesh Singh Chauhan is a Chair Professor in the Department of Electrical Engineering at the Indian Institute of Technology Kanpur, India. He is the developer of several industry standard models: ASM-HEMT, BSIM-BULK (formerly BSIM6), BSIM-CMG, BSIM-IMG, BSIM4 and BSIM-SOI models. His research group is involved in developing compact models for GaN transistors, FinFET, nanosheet/gate-all-around FETs, FDSOI transistors, negative capacitance FETs and 2D FETs. His research interests are RF characterization, modeling, and simulation of semiconductor devices.
Le informazioni nella sezione "Su questo libro" possono far riferimento a edizioni diverse di questo titolo.
Da: Brook Bookstore On Demand, Napoli, NA, Italia
Condizione: new. Questo è un articolo print on demand. Codice articolo 38c31597a7d9290a8d191acfb56f9ef5
Quantità: Più di 20 disponibili
Da: Majestic Books, Hounslow, Regno Unito
Condizione: New. Codice articolo 393885290
Quantità: 3 disponibili
Da: Revaluation Books, Exeter, Regno Unito
Paperback. Condizione: Brand New. 350 pages. 8.75x6.00x0.50 inches. In Stock. This item is printed on demand. Codice articolo __0081024010
Quantità: 2 disponibili
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. Codice articolo 26386763189
Quantità: 3 disponibili
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. 260 pp. Englisch. Codice articolo 9780081024010
Quantità: 2 disponibili
Da: Biblios, Frankfurt am main, HESSE, Germania
Condizione: New. Codice articolo 18386763199
Quantità: 3 disponibili
Da: GreatBookPrices, Columbia, MD, U.S.A.
Condizione: New. Codice articolo 31404957-n
Quantità: Più di 20 disponibili
Da: GreatBookPricesUK, Woodford Green, Regno Unito
Condizione: New. Codice articolo 31404957-n
Quantità: Più di 20 disponibili
Da: Ria Christie Collections, Uxbridge, Regno Unito
Condizione: New. In. Codice articolo ria9780081024010_new
Quantità: Più di 20 disponibili
Da: preigu, Osnabrück, Germania
Taschenbuch. Condizione: Neu. Industry Standard FDSOI Compact Model BSIM-IMG for IC Design | Chenming Hu (u. a.) | Taschenbuch | Einband - flex.(Paperback) | Englisch | 2019 | Elsevier Inc | EAN 9780081024010 | Verantwortliche Person für die EU: Zeitfracht Medien GmbH, Ferdinand-Jühlke-Str. 7, 99095 Erfurt, produktsicherheit[at]zeitfracht[dot]de | Anbieter: preigu. Codice articolo 126704451
Quantità: 5 disponibili