Scanning Nonlinear Dielectric Microscopy: Investigation of Ferroelectric, Dielectric, and Semiconductor Materials and Devices is the definitive reference on an important tool to characterize ferroelectric, dielectric and semiconductor materials. Written by the inventor, the book reviews the methods for applying the technique to key materials applications, including the measurement of ferroelectric materials at the atomic scale and the visualization and measurement of semiconductor materials and devices at a high level of sensitivity. Finally, the book reviews new insights this technique has given to material and device physics in ferroelectric and semiconductor materials.
The book is appropriate for those involved in the development of ferroelectric, dielectric and semiconductor materials devices in academia and industry.
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Yasuo Cho graduated in 1980 from Tohoku University in electrical engineering department. In 1985 he became a research associate at Research Institute of Electrical Communication Tohoku University. In 1990, he received an associate professorship from Yamaguchi University. He then became an associate professor in 1997 and a full professor in 2001 at Research Institute of Electrical Communication Tohoku University. During this time, his main research interests included nonlinear phenomena in ferroelectric materials and their applications, research on the scanning nonlinear dielectric microscopy (SNDM), and research on using the SNDM in next-generation ultrahigh density ferroelectric data storage (SNDM ferroelectric probe memory).
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Scanning Nonlinear Dielectric Microscopy: Investigation of Ferroelectric, Dielectric, and Semiconductor Materials and Devices is the definitive reference on an important tool to characterize ferroelectric, dielectric and semiconductor materials. Written by the inventor, the book reviews the methods for applying the technique to key materials applications, including the measurement of ferroelectric materials at the atomic scale and the visualization and measurement of semiconductor materials and devices at a high level of sensitivity. Finally, the book reviews new insights this technique has given to material and device physics in ferroelectric and semiconductor materials. The book is appropriate for those involved in the development of ferroelectric, dielectric and semiconductor materials devices in academia and industry. Englisch. Codice articolo 9780128172469
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