Cmos/Bicmos Ulsi: Low-Voltage, Low Power - Rilegato

Yeo, Kiat Seng; Rofail, Samir S.; Goh, Wang-Ling

Rilegato

ISBN 10: 0130321621 ISBN 13: 9780130321626

Casa editrice: Prentice Hall, 2002

Riassunto

The advent of ultra-large-scale-integration (ULSI) technology, which has brought the possibility of tiny logic integrated circuits packed with millions of transistors, has highlighted the importance of complementary metal oxide semiconductor (CMOS) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies. After looking at the history of semiconductors, Yeo (Nanyang Technological U., Singapore), Rofail (Tritech Consulting, Canada), and Goh (Nanyang Technological U., Singapore) move on to look at the different BiCMOS process technologies and discuss design considerations for achieving high performance devices. Further discussion includes considerations of future generations of circuits designed for ultra-low-voltage usage and explains how the uses of latches and flip-flops can be integrated into designs for further performance and efficiency. Annotation c. Book News, Inc., Portland, OR (booknews.com)

Su questo libro

L'autore

KIAT-SENG YEO joined the School of Electrical and Electronic Engineering (EEE), Nanyang Technological University (NTU), Singapore in 1993. He is now the Sub-Dean of EEE, Principal Investigator of NTU's Integrated Circuit Technology Research Group, Program Manager of the System-on-Chip Flagship Project, Coordinator of the Integrated Circuit Design Research Group, Technical Chairman of the 8th and 9th International Symposium on Integrated Circuits, Devices and Systems, and a Technical Consultant. He holds six patents and published more than 100 articles in BiCMOS/CMOS integrated circuit design and technology.

SAMIR S. ROFAIL has been a teacher, researcher, and consultant in semiconductor and IC design for 20 years. From 1992 to 1999, he coordinated NTU's IC-Design group, leading intensive research on low-voltage, low-power BiCMOS/CMOS circuits. He is now a technical consultant in Waterloo, Canada.

WANG-LING GOH joined NTU in 1996. Her research interests are in the areas of silicon processing technologies, particularly the SOI structures, CMP and Copper. She holds one patent and has published over 30 articles in the above named areas.

Dalla quarta di copertina

The complete guide to CMOS/BiCMOS ULSI and GSI for every circuit design professional.

• The in-depth, up-to-the-minute guide to low-power, low-voltage circuit design
• Process integration, device modeling, and characterization
• Includes the latest MOS and bipolar models
• Advanced copper metallization techniques, deep submicron processes, and isolation techniques

Today's engineers must build devices that are more portable, more reliable, and more cost-effective than ever before. To this end, power has become a crucial consideration in ultra-large-scale-integration (ULSI) and giga-scale integration (GSI) engineering. BiCMOS technology now represents the optimal solution for a wide range of advanced applications. In this book, three of the field's leaders present in-depth coverage of the latest developments in CMOS/BiCMOS ULSI design―including thorough analyses of the fabrication technologies needed to realize low-voltage, low-power CMOS/BiCMOS structures.

Unlike previous books, CMOS/BICMOS ULSI covers low-voltage, low-power circuit design from all perspectives, including process integration, device modeling, and characterization. Coverage includes:

• MOS/BiCMOS process technology and integration, including manufacturing considerations, advanced isolation techniques, and breakthrough copper metallization schemes
• Device behavior and modeling, including new bipolar models such as HICUM, MEXTRAM, and VBIC, and key MOS models such as EKV, BSIM, and Philips MOS9 Model
• In-depth comparisons of circuit techniques, configurations, and features of single battery operation
• Altering transistor positions: New techniques for designing low-voltage, low-power latches and flip-flops

BiCMOS combines the low-power dissipation and high packing density of CMOS with the high speed and high output drive of bipolar devices. Using this book's state-of-the-art design techniques, you can leverage BiCMOS to its fullest advantage.

Dettagli dell'edizione

• Editore: Prentice Hall
• Data di pubblicazione: 2002
• Lingua: Inglese
• ISBN 10: 0130321621
• ISBN 13: 9780130321626
• Rilegatura: Copertina rigida
• Numero di pagine: 585
• Contatto del produttore: non disponibile
• Persona responsabile: Yeepin GmbH; 492000000000; sunshine12232@outlook.com; ; Alleestr.11; Kaiserslautern; Rheinland-Pfalz; 67655; Germania