MOSFET: Theory and Design - Brossura

Warner Jr., R. M.; Grung, B. L.

Brossura

ISBN 10: 0195116429 ISBN 13: 9780195116427

Casa editrice: Oxford University Press USA, 1999

Riassunto

MOSFET Theory and Design presents clearly and in depth the theory and design of the MOSFET device, catering to its dominant position in today's microelectronics technology. This slim volume carefully builds examples from a simple level to more complex, real-life cases. The text includes a detailed bibliography and numerous problems sets - analytic, computer, and design - as well as original analyses, in-text exercises, and chapter summaries and check lists. It is appropriate for a one-semester course for junior, senior, or graduate students in engineering. A solutions manual is available free to adopters of the text.

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Contenuti

• Chapter 1 Basic MOSFET Theory
• 1-1: Field-Effect Transistors
• 1-2: Mosfet Definitions
• 1-3: Rudimentary Analysis
• 1-4: Current-Voltage Equations
• 1-5: Universal Transfer Characteristics
• 1-6: Transconductance
• 1-7: Inverter Options
• Chapter 2 MOS-Capacitor Phenomena
• 2-1: Oxide-Silicon Boundary Conditions
• 2-2: Approximate Field and Potentials Profiles
• 2-3: Accurate Band Diagram
• 2-4: Barrier-Height Difference
• 2-5: Interfacial Charge
• 2-6: Oxide Charge
• 2-7: Calculating Threshold Voltage
• Chapter 3 MOS-Capacitor Modeling
• 3-1: Exact-Analytic Surface Modeling
• 3-2: Comparing MOS and Junction Capacitances
• 3-3: Small-Signal Equivalent Circuits
• 3-4: Ideal Voltage-Dependent Capacitance
• 3-5: Real Voltage-Dependent Capacitance
• 3-6: Physics of MOS-Capacitance Crossover
• 3-7: Analysis of MOS-Capacitance Crossover
• Chapter 4 Improved MOSFET Theory
• 4-1: Channel-Junction Interactions
• 4-2: Ionic Charge Model
• 4-3: Body Effect
• 4-4: Advanced Long-Channel Models
• Chapter 5 SPICE Models
• 5-1: Level-2 Parameters
• 5-2: Level-2 Model
• 5-3: Small-Signal Applications of Model
• 5-4: Large-Signal Applications of Model
• Chapter 6 MOSFET-BJT Performance Comparisons
• 6-1: Simple-Theory Transconductance Comparison
• 6-2: Subthreshold Transconductance Theory
• 6-3: Calculating Maximum MOSFET gm/out
• 6-4: Transconductance versus Input Voltage
• 6-5: Physics of Subthreshold Transconductance
• Chapter 7 MOSFET Design for Today's ICs
• 7-1: Survey of Recent Models [e.g., BSIM 1-3]
• 7-2: Solving Key Problems [e.g., subthreshold, hot-electron, short-channel effects]
• 7-3: Additional Circuit-Design Issues [e.g., noise analysis, temperature effects, characteristic matching]
• 7-4: Related Devices [e.g., MODFET, JFET]
• 7-5: Future Trends in Device Simulation
• Appendixes
• Tables
• References
• Topics for Review
• Analytic Problems
• Computer Problems
• Design Problems
• Symbol Index
• Subject Index

Dettagli dell'edizione

• Editore: Oxford University Press USA
• Data di pubblicazione: 1999
• Lingua: Inglese
• ISBN 10: 0195116429
• ISBN 13: 9780195116427
• Rilegatura: Copertina flessibile
• Numero di pagine: 272
• Contatto del produttore: Messaggerie Libri; ufficio.anagrafiche@meli.it; ; Via Verdi, 8.; Assago Milano; 20090; Italia