Operation and Modeling of the Mos Transistor - Rilegato

Tsividis, Yannis

Rilegato

ISBN 10: 0195170148 ISBN 13: 9780195170146

Casa editrice: Oxford Univ Pr, 2003

Riassunto

Extensively revised and updated, this, the second edition of the highly praised textOperation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.

KEY FEATURES


·Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.


·Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.


·New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.


·Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.

Su questo libro

Product Description

Book by Tsividis Yannis

Dettagli dell'edizione

• Editore: Oxford Univ Pr
• Data di pubblicazione: 2003
• Lingua: Inglese
• ISBN 10: 0195170148
• ISBN 13: 9780195170146
• Rilegatura: Copertina rigida
• Numero edizione: 2
• Numero di pagine: 640
• Contatto del produttore: non disponibile
• Persona responsabile: Ufficio Anagrafiche Messaggerie; ufficio.anagrafiche@meli.it; ; Via Verdi, 8.; Assago Milano; 20090; Italia