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Extensively revised and updated, this, the second edition of the highly praised textOperation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.
KEY FEATURES
·Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.
·Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.
·New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.
·Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.
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Book by Tsividis Yannis
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Operation and Modeling of the MOS Transistor
Da: Prometei Books, New Rochelle, NY, U.S.A.
Valutazione del venditore 5 su 5 stelle
Hardcover. Condizione: New. 2nd Edition. New book, never read. Pages clean and crisp, spine unbroken. Oversized book, may incur additional shipping charges. 0424A. Codice articolo A0424-015
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EUR 90,90
Spedizione EUR 4,46
Spedito in U.S.A.
Spedito in U.S.A.
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