Very High Speed Mos Devices - Rilegato

Kohyama, Susumu

Rilegato

ISBN 10: 019856340X ISBN 13: 9780198563402

Casa editrice: Clarendon Pr, 1990

Riassunto

This comprehensive work describes very-high speed and very-high performance metal-oxide-silicon (MOS) devices, which are mainstream technologies in very- (and ultra- ) large-scale integration microelectronics and research. The book provides wide ranging coverage of this area, from basic subjects to a variety of applications. The authors are researchers and engineers from the Toshiba Corporation, a world leader in MOS device technology, especially in the innovative area of low-power complementary MOS. The book includes a review of the concept and historical background of MOS devices, and information on their basic operating principles and physical characteristics. It details submicron-scale device process technologies, simulation and computer-assisted design, and circuit design for both logic and memory LSIs, ranging from a basic introduction to practical high speed applications, with many diagrams and actual data. In particular, high speed MOS devices are considered at the system level, rather than the individual device or component level, in the achievement of overall high system speed and performance. Future trends and issues in MOS technology, including three-dimensional LSIs are also described.

Dettagli dell'edizione

• Editore: Clarendon Pr
• Data di pubblicazione: 1990
• Lingua: Inglese
• ISBN 10: 019856340X
• ISBN 13: 9780198563402
• Rilegatura: Copertina rigida
• Numero di pagine: 540
• Contatto del produttore: non disponibile
• Persona responsabile: Ufficio Anagrafiche Messaggerie; ufficio.anagrafiche@meli.it; ; Via Verdi, 8; Assago Milano; 20090; Italia