Sinossi
For the international second edition, the author builds upon and expands on hallmark features of the book established in the first edition, adding sections on new technology and increasing the number of end-of-chapter problems by 30%. Updated material relating to the environmental applications of technology was added , as well as a new chapter on nanoscale devices. Chapters on MOS capacitor and generation and recombination were also revised and updated.
The book is divided into 4 parts: Part I on Semiconductor Physics; Part II on the principles of operation and modeling of the fundamental junctions and transistors; Part III on the diode, MOSFET and BJT topics needed for circuit design, and Part IV on photonic devices, microwave FETs, negative-resistance diodes, and power devices. Within each part, material is presented hierarchically, with core topics first, followed by advanced topics.
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
Informazioni sull'autore
Sima Dimitrijev is Professor at the School of Microelectronic Engineering at Griffith University in Australia. He is the author of Understanding Semiconductor Devices (OUP, 2000) as well as numerous other publications in the areas of MOSFET technology, modeling and applications.
Le informazioni nella sezione "Su questo libro" possono far riferimento a edizioni diverse di questo titolo.
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Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 576 | Sprache: Englisch | Produktart: Bücher | For the international second edition, the author builds upon and expands on hallmark features of the book established in the first edition, adding sections on new technology and increasing the number of end-of-chapter problems by 30%. Updated material relating to the environmental applications of technology was added , as well as a new chapter on nanoscale devices. Chapters on MOS capacitor and generation and recombination were also revised and updated. Codice articolo 28623634/2
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Paperback. Condizione: new. Paperback. For the international second edition, the author builds upon and expands on hallmark features of the book established in the first edition, adding sections on new technology and increasing the number of end-of-chapter problems by 30%. Updated material relating to the environmental applications of technology was added , as well as a new chapter on nanoscale devices. Chapters on MOS capacitor and generation and recombination were also revised and updated.The book is divided into 4 parts: Part I on Semiconductor Physics; Part II on the principles of operation and modeling of the fundamental junctions and transistors; Part III on the diode, MOSFET and BJT topics needed for circuit design, and Part IV on photonic devices, microwave FETs, negative-resistance diodes, and power devices. Within each part, material is presented hierarchically, with core topics first, followed by advanced topics. For the international second edition, the author builds upon and expands on hallmark features of the book established in the first edition, adding sections on new technology and increasing the number of end-of-chapter problems by 30%. Updated material relating to the environmental applications of technology was added , as well as a new chapter on nanoscale devices. Chapters on MOS capacitor and generation and recombination were also revised and updated. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Codice articolo 9780199896349
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Principles of Semiconductor Devices : International Second Edition
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ISBN 10: 0199896348
ISBN 13: 9780199896349
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Condizione: Hervorragend. Zustand: Hervorragend | Seiten: 576 | Sprache: Englisch | Produktart: Bücher | For the international second edition, the author builds upon and expands on hallmark features of the book established in the first edition, adding sections on new technology and increasing the number of end-of-chapter problems by 30%. Updated material relating to the environmental applications of technology was added , as well as a new chapter on nanoscale devices. Chapters on MOS capacitor and generation and recombination were also revised and updated. Codice articolo 28623634/1
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