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The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
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Contenuti
Modelling of Sub-Micron Devices.- Boltzmann Transport Equation.- Transport and Material Considerations for Submicron Devices.- Epitaxial Growth for Sub Micron Structures.- Insulator/Semiconductor Interfaces.- Theory of the Electronic Structure of Semiconductor Surfaces and Interfaces.- Deep Levels at Compound-Semiconductor Interfaces.- Ensemble Monte Carlo Techniques.- Noise and Diffusion in Submicron Structures.- Superlattices.- Submicron Lithography.- Quantum Effects in Device Structures Due to Submicron Confinement in One Dimension.- Physics of Heterostructures and Heterostructure Devices.- Correlation Effects in Short Time, Nonstationary Transport.- Device-Device Interactions.- Quantum Transport and the Wigner Function.- Far Infrared Measurements of Velocity Overshoot and Hot Electron Dynamics in Semiconductor Devices.- The Influence of Contacts on the Behavior of Near and Sub-Micron INP Devices.- Monte Carlo Simulation of Transport in Submicron Structures.- Two Dimensional Electron Gas Fet.- Hot Electron Transfer Amplifiers.- New Graded Band Gap and Superlattice Structures and their Applications to Photodetectors, Bipolar Transistors and High-Speed Devices.- Metal-Semiconductor Interfaces.- Nonequilibrium Phonons in Semiconductors: Power Dissipation of Highly Laser-Excited Electron-Hole Plasmas.- Picosecond Measurements of Device and Circuit Transient Response with Optoelectric Techniques.
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Book by Grubin Harold L Ferry David K Jacoboni C
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The Physics of Submicron Semiconductor Devices (NATO Science Series B:, 180)
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Condizione: Very Good. *Price HAS BEEN REDUCED by 10% until Monday, July 28 (weekend SALE item)* 746 pp., Hardcover, previous owner's name to front free endpaper, some wear to corners else text clean & binding tight. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country. Codice articolo ZB1276649
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Hardcover. Condizione: Very Good. No DJ. Usual library markings. Binding is tight, text clean. Based on a NATO ASI held July 1983 in San Miniato, Italy. Contributions identify key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium and quantum transport, interfacial and size constraints issues are also addressed. Codice articolo 3002928
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Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibri. Codice articolo 5901542
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES. . 1 E. Constant BOLTZMANN TRANSPORT EQUATION. . . . 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES. 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES. 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES. 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION. . 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES. 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS. . 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION. 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES. 577 S. J. Allen, Jr. 748 pp. Englisch. Codice articolo 9780306429866
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Buch. Condizione: Neu. Neuware -The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES. . 1 E. Constant BOLTZMANN TRANSPORT EQUATION. . . . 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES. 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES. 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES. 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION. . 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES. 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS. . 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION. 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES. 577 S. J. Allen, Jr.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 748 pp. Englisch. Codice articolo 9780306429866
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES. . 1 E. Constant BOLTZMANN TRANSPORT EQUATION. . . . 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES. 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES. 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES. 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION. . 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES. 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS. . 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION. 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES. 577 S. J. Allen, Jr. Codice articolo 9780306429866
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The Physics of Submicron Semiconductor Devices (NATO Science Series B:, 180)
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