Engineering of Point Defects in Solids: A Thermodynamic Approach to the Physics of Semiconductors - Brossura

Bulyarskiy

 
9780443443053: Engineering of Point Defects in Solids: A Thermodynamic Approach to the Physics of Semiconductors
Brossura
ISBN 10: 044344305X ISBN 13: 9780443443053
Casa editrice: Elsevier, 2026

Sinossi

Engineering of Point Defects in Solids: A Thermodynamic Approach to the Physics of Semiconductors covers the theoretical and experimental thermodynamics and kinetics of defect formations in solids, including the formation of complex defects from simple ones. The book describes point defects (vacancies, antistructural, interstitial atoms, and impurities) while also providing algorithms for calculating their defect concentrations, conductivity, and stoichiometric composition. Doping of a substance with impurities, with a focus on germanium and silicon (as common semiconductors), is covered, including retrograde solubility, polytrophy, the solubility of impurities, and the mutual influence of donor and acceptor impurities. The thermodynamics of complex defects formed with the participation of vacancies (divacancies and complexes) are discussed, as is luminescence as a non-destructive method for monitoring the dynamics of changes in the concentration of defects in certain technological processes, with particular attention paid to the phenomenon of electron-photon interaction. Other topics covered include the optical properties of various complexes, compounds with volatile components, analyzing the kinetics of precipitate and nanocrystal formation, and more.

Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.

Informazioni sull'autore

Russian Academy of Sciences, Russia

Dalla quarta di copertina

Engineering of Point Defects in Solids: A Thermodynamic Approach to the Physics of Semiconductors covers the theoretical and experimental thermodynamics and kinetics of defect formations in solids, including the formation of complex defects from simple ones. The book describes point defects (vacancies, antistructural, interstitial atoms, and impurities) while also providing algorithms for calculating their defect concentrations, conductivity, and stoichiometric composition. Doping of a substance with impurities, with a focus on germanium and silicon (as common semiconductors), is covered, including retrograde solubility, polytrophy, the solubility of impurities, and the mutual influence of donor and acceptor impurities. The thermodynamics of complex defects formed with the participation of vacancies (divacancies and complexes) are discussed, as is luminescence as a non-destructive method for monitoring the dynamics of changes in the concentration of defects in certain technological processes, with particular attention paid to the phenomenon of electron-photon interaction. Other topics covered include the optical properties of various complexes, compounds with volatile components, analyzing the kinetics of precipitate and nanocrystal formation, and more.

Le informazioni nella sezione "Su questo libro" possono far riferimento a edizioni diverse di questo titolo.

Editore
Elsevier
Data di pubblicazione
2026
Lingua
Inglese
ISBN 10 
044344305X
ISBN 13 
9780443443053
Rilegatura
Copertina flessibile
Numero edizione
1
Numero di pagine
434
Contatto del produttore
non disponibile
Persona responsabile
LSWR Group
b.criscuolo@lswr.it

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