Defects in Silicon: Proceedings of Symposium B on Science and Technology of Defects in Silicon of the 1989 E-Mrs Conference, Strasbourg, France, 30: Symposium Proceedings - Rilegato

Symposium B On Science And Technology Of Defects In Silicon; Chantre, A.; Ammerlaan, C. A. J.; Wagner, P.; European Materials Research Society Meeting (1989 Strasbourg, France)

Rilegato

ISBN 10: 0444886192 ISBN 13: 9780444886194

Casa editrice: North-Holland, 1990

Riassunto

This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities. In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.

Dettagli dell?edizione

• Editore: North-Holland
• Data di pubblicazione: 1990
• ISBN 10: 0444886192
• ISBN 13: 9780444886194
• Rilegatura: Copertina rigida
• Lingua: Inglese
• Numero di pagine: 505
• Redattore: Wagner P.