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Integrierte Schaltkreise werden immer komplexer - deshalb wird es zunehmend schwieriger, Fehler schnell und treffsicher aufzuspüren. Die Photonenemissionsmikroskopie (PEM) ist eine Analysetechnik auf physikalischer Grundlage, die sich als Fehlererkennungsmethode bewährt hat. Dieser Band erläutert alle Aspekte dieser Methode, von der instrumentellen Ausrüstung über spezifische Details der Mikroskope bis hin zu Merkmalen der Photonenemission unter verschiedenen Bedingungen. (11/00)
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Informazioni sull?autore
Wai Kin Chim is the author of Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy , published by Wiley.
Dalla quarta di copertina
The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.
Dal risvolto di copertina interno
The diminishing size and greater complexity of modern semiconductor integrated circuits poses new challenges in fault detection. Photon Emission Microscopy (PEM) is a physical fault localisation technique used for analysing IC failures. Detailing the PEM technique and its application to semiconductor device analysis, this unique reference:
* Illustrates the application of the PEM technique in various areas of device reliability, in particular hot-carrier, oxide and ESD reliability.
* Presents the principles of design and calibration for a spectroscopic emission microscope system along with coverage of the three main operation modes: frontside, backside and spectroscopic PEM
* Provides an analysis of light emission in semiconductors under hot-carrier and high-field impulse stressing in MOS transistors and photon emission from biased MOS capacitors.
Not only an essential reference for researchers and students in the field, the numerous practical examples throughout the text also make this an indispensible guide for failure analysis engineers and microelectrics industry professionals.
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Semiconductor Device and Failure Analysis Using Photon Emmission Microscopy: Using Photon Emissing Microscopy (Quality and Reliability Engineering Series)
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Gebunden. Condizione: New. This reference details the principles of design, calibration, and use of photon emission microscopy (PEM) as a fault localization technique used for analyzing device reliability and failure. (SciTech Book News Vol. 25, No. 2 June 2001)The diminishing . Codice articolo 446916852
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