Nonlinear Transistor Model Parameter Extraction Techniques - Rilegato

Rilegato

ISBN 10: 0521762103 ISBN 13: 9780521762106

Casa editrice: Cambridge University Press, 2011

Riassunto

Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.

Su questo libro

Informazioni sugli autori

Matthias Rudolph is the Ulrich-L.-Rohde Professor for RF and Microwave Techniques at Brandenburg University of Technology, Cottbus, Germany. Prior to this, he worked at the Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik (FBH), Berlin, where he was responsible for modeling of GaN HEMTs and GaAs HBTs and heading the low-noise components group.

Christian Fager is an Associate Professor at Chalmers University of Technology, Sweden, where he leads a research group focusing on energy efficient transmitters and power amplifiers for future wireless applications. In 2002 he received the Best Student Paper Award at the IEEE International Microwave Symposium for his research on uncertainties in transistor small signal models.

David E. Root is Agilent Research Fellow and Measurement and Modeling Sciences Architect at Agilent Technologies, Inc., where he works on nonlinear device and behavioral modeling, large-signal simulation, and nonlinear measurements for new technical capabilities and business opportunities. He is a Fellow of the IEEE and in 2007 he received the 2007 IEEE ARFTG Technology Award.

Dettagli dell'edizione

• Editore: Cambridge University Press
• Data di pubblicazione: 2011
• Lingua: Inglese
• ISBN 10: 0521762103
• ISBN 13: 9780521762106
• Rilegatura: Copertina rigida
• Numero di pagine: 366
• Redattore: Rudolph Matthias, Fager Christian, Root David E.
• Contatto del produttore: non disponibile
• Persona responsabile: gpsr@libri.de; gpsr@libri.de; ; Europaallee 1; Bad Hersfeld; 36244; Germania