ESSDERC '90, Solid State Devices 90 - Rilegato

European Solid State Device Research Conference (20th : 1990 : Nottingham, England); Eccleston, W.; Institute Of Physics (Great Britain); Institution Of Electrical Engineers; European Physical Society

9780750300650: ESSDERC '90, Solid State Devices 90

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ISBN 10: 0750300655 ISBN 13: 9780750300650

Casa editrice: CRC Press, 1990

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Topics covered include: compound semiconductor and silicon device technology, structure, processing techniques, optical properties and advanced device concepts. Essential reading for researchers in solid state electronics in both industry and academia and a valuable reference source.

Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.

Contenuti

Progress in high-frequency heterojunction field effect transistors (L F Eastman). Novel applications of porous silicon (J Keen). Silicon on insulator I (4 papers). Heterojunction transistor structures (5 papers). Advanced silicon device concepts (4 papers). Compositional analysis of submicron silicon in one, two and three dimensions (C Hill). Silicon processing I (12 papers). Compound device structure and technology (8 papers). Bulk MOS devices and circuits (11 papers). Circuit level models for VLSI components (F M Klaassen). Silicon processing II (8 papers). GaAs FET structures (5 papers). Phenomena in advanced MOS structures (8 papers). Recent trends in multilayer simulation for submicron technologies (A Poncet, A Gerodolle and S Martin). Hot carriers in MOS devices (9 papers). Compound semiconductor symposium (4 papers). Silicon bipolar processing (7 papers). Degradation and wearout of thin dielectric layers during charge injection (M M Heyns). Silicon bipolar and power devices (8 papers). Optical properties and devices (7 papers). Silicon on insulator II (8 papers). Microcontaminations (T Ohmi and T Shibata). Nanometric structures on compound semiconductors (C D Wilkinson). DRAM technology (4 papers). heterojunction bipolar technology (4 papers). Physical processes in silicon device structures (5 papers). Recent trends in InP-based optoelectronic components (O Hildebrand). Silicon circuits (9 papers). Physics of optical and related devices (7 papers). MOS-based structures and measurements (7 papers). Author index.