Articoli correlati a Heterostructure Epitaxy and Devices: 11
Sinossi
Proceedings of the NATO Advanced Research Workshop, Smolenice Castle, Slovakia, October 15-19, 1995
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Contenuti
Section I: Epitaxial Growth. Simulation of III-V Layer Growth; Y. Arima, T. Irisawa. Real Time Monitoring of Epitaxial Growth; W. Richter, et al. Influence of Carrier Gas on AlAs, GaAs and InP MOCVD Growth; S. Hasenöhrl, et al. LP-MOVPE of III-V Semiconductors Using Highly Pure N2 as the Carrier Gas.; H. Hardtdegen, et al. Dependence of Properties of LP MOCVD InGaP Layers on Growth Conditions; R. Júdela, et al. Growth of GaN MOCVD Layers on GaN Single Crystals; K. Pakula, et al. Electrical and Optical Properties of Te-Doped GaSb Grown by MOVPE; K. Hjelt, T. Tuomi. Computer Simulations of Epitaxial Growth, Surface Kinetic Processes and RHEED Intensity Oscillations; D. Papajová, et al. Growth and Characterization of InP/Ga0.47 In0.53 As Deposited by MOMBE; M. v.d. Ahe, et al. Investigation of the Effect of GaAs Buffer Layers Grown by MBE at Different Temperatures on the Performance of GaAs MESFETs; M. Lagadas, et al. Multilayered GaAs VPE Structures for Micro Machining; K. Somogyi, et al. Growth of InP and GaInAsP Layers by Liquid-Phase Epitaxy Using Holmium Gettering and Doping; O. Procházková, et al. Meander Type LPE and High Temperature Stability of Elastically Strained GaInAsP/InP Layers; D. Nohavica, et al. Section II: Heterostructures. Scanning Tunneling Microscopy Characterization of Heterostructures; E.R. Weber, et al. Microscopic Origin of Femtosecond Spectral Hole Burning in Quantum Wells; A. Mosková, M. Mosko. Carrier Capture Due to Carrier-Carrier Interaction in Quantum Wells; K. Kálna, M. Mosko. Optical and Theoretical Study of GaAs Quantum Wells Embedded in GaAs/AlAs Superlattices; V. Donchev, et al. MOCVD Growth and Characterization of InAs/GaAsSuperlattices; M. Černiansky, et al. Electrical Characteristics of Epitaxial Al/AlxGa1-x As/n- Al0.25 Ga0.75 As Heterostructures; Zs.J. Horváth, L. Dozsa. Investigation of a GaAs Heterostructure with an AlAs Potential Barrier by DLTS Measurements; L. Stuchlíková, et al. Effect of Heterobarriers on the DX Center in AlGaAsSb and in GaAlAs; L. Dózsa, et al. Mechanical Study of the Strained InxGa1-x As/GaAs Heterostructures; Á. Nemcsics, et al. Hot Electrons at Semiconductor Heterojunctions; M. Horák. Section III: Composite Systems. III/V-Compound Semiconductors on Silicon; A. Schlachetzki. Crystal Growth of Column III Nitrides by OMVPE; I. Akasaki, H. Amano. GaSb Dots Grown on GaAs Surface by MOCVD; R. Bozek, et al. Crystallographic Tilting in Lattice- Mismatched Heteroepitaxy: A Kinetic Approach; F. Riesz. Optimization of MOVPE Growth for InGaAs on (001)Si; H.-H. Wehmann, et al. SEM-Based Characterization Techniques for Strongly Mismatched Heteroepitaxy; E. Peiner, et al. Defect Characterization of Strained InGaAs Structures Prepared on InP and GaAs; R. Srnanek, et al. Influence of the Temperature on the Morphology and Crystal Quality of MBE Grown InAs/GAAs Heterostructures; L. Francesio, et al. Section IV: Characterization. Study of Fundamental Growth Mechanism by Atomic Force Microscopy; C.C. Hsu, et al. Characterisation of the Epitaxial Layers Using the Lift-Off Technique; J. Novák. Many Crystal X-Ray Diffractometry on Superlattices; V. Holý. Quantum Magnetotransport in Two-Dimenstional Electron Gas in InGaAs/InP Heterostructures; B. Pödör, et al.
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Heterostructure Epitaxy and Devices (Nato Science Partnership Subseries: 3)
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