Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fibre optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
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Preface. Structure and Topology. Defect-free vitreous networks: The idealised structure of SiO2 and related glasses; A.C. Wright. Topology and topological disorder in silica; L.W. Hobbs, X. Yuan. Bulk Defects. Optical properties of defects in silica; L. Skuja. The natures of point defects in amorphous silicon dioxide; D.L. Griscom. Ab initio theory of point defects in SiO2; G. Pacchioni. A demi-century of magnetic defects in alpha-quartz; J.A. Weil. Interaction of SiO2 glasses with high energy ion beams and vacuum UV excimer laser pulses; H. Hosono, K. Kawamura. Excitons, localized states in silicon dioxide and related crystals and glasses; A.N. Trukhin. Gamma rays induced conversion of native defects in natural silica; F.M. Gelardi, S. Agnello. Ge and Sn doping in silica: structural changes, optically active defects, paramagnetic sites; A. Paleari. Computational studies of self-trapped excitons in silica; L.R. Corrales, et al. Surface Defects. Defects on activated silica surface; V.A. Radzig. Ab-initio molecular dynamics simulation of amorphous silica surface; M. Bernasconi. Bragg Grating. periodic UV-induced index modulations in doped-silica optical fibers: formation and properties of the fiber Bragg grating; C.G. Askins. Bulk silicas prepared by low presssure plasma CVD: formation of structure and point defects; K.M. Golant. Change of spectroscopic and structural properties of germanosilicate glass uner mechanical compression and UV irradiation; V.M. Machinsky. UV photoinduced phenomena in oxygen-deficient silica glasses; A. Rybaltovskii. One- and two-quantum UV photo-reactions in pure and doped silica glasses. 2. Germanium oxygen deficient centers (GODC). V.N. Bagratashvili, et al. Photoinduced refractive index change and second harmonic generation in MCVD germanosilicate core fibers fabricated in reduced (nitrogen and helium) atmospheres; E.M. Dianov, et al. Si/SiO2 Interface and Gate Dielectrics. Molecular hydrogen interaction kinetics of interfacial Si dangling bonds in thermal (111)Si/SiO2. An electron spin resonance saga; A.L. Stesmans. Ultrathin oxide films for advanced gate dielectrics applications Current progress and future challenges; E.P. Gusev. SiC/SiO2 interface defects; V.V. Afanas'ev. Point defects in Si-SiO2 systems: current understanding; S.P. Karna, et al. Index.
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Da: moluna, Greven, Germania
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000 Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-ox. Codice articolo 5969607
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy. 636 pp. Englisch. Codice articolo 9780792366850
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Softcover. Hardcover 624 pages. with Figures and tables. In good clean, solid condition. Nato Science Series II. Mathematics, Physics and Chemistry Vol. 2. Proceedings of the NATO Advanced Study Institute, Erice, Italy, April 8-20, 2000. in englischer Sprache (in english). Codice articolo P5-0030
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Buch. Condizione: Neu. Defects in SiO2 and Related Dielectrics: Science and Technology | Gianfranco Pacchioni (u. a.) | Buch | NATO Science Series II: Mathematics, Physics and Chemistry | viii | Englisch | 2000 | Springer Netherland | EAN 9780792366850 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand. Codice articolo 102549877
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Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies.This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 636 pp. Englisch. Codice articolo 9780792366850
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy. Codice articolo 9780792366850
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