The MOCVD Challenge: Volume 1, A Survey of GaInAsP-InP for Photonic and Electronic Applications - Rilegato

Razeghi, Manijeh

Rilegato

ISBN 10: 0852741618 ISBN 13: 9780852741610

Casa editrice: CRC Press, 1989

Riassunto

The MOCVD Challenge describes how to use MOCVD to grow materials and devices, in particular indium phosphide, gallium indium arsenide and gallium indium arseno phosphide. It contains detailed descriptions of reactors, starting materials and growth conditions. It discusses lattice-matched materials, strained layers and growth on non-matched substrates such as silicon. It includes results which include the growth, characterization, application of heterojunctions, quantum wells and superlattices based on these compounds. It concludes with applications for indium phosphide semiconductors such as lasers and photodetectors and for electronic components such as optical fibres and satellite communication systems. Together with The MOCVD Challenge: Volume 2 it forms a valuable reference for users of MOCVD, and those evaluating MOCVD for use in their research. Written for physicists, materials scientists, electronics and electrical engineers involved in semiconducting materials and as-grown device research.

Su questo libro

Contenuti

Introduction to semiconductor compounds. MOCVD growth technique. ^IIn-situ monitoring of MOCVD growth.^IEx-situ characterization techniques. MOCVD growth of GaAs layers. GaInP-GaAs system: MOCVD growth and characterization. Optical devices. GaAs-based layers. GaAs-based heterojunction electron devices grown by MOCVD.

Dettagli dell?edizione

• Editore: CRC Press
• Data di pubblicazione: 1989
• Lingua: Inglese
• ISBN 10: 0852741618
• ISBN 13: 9780852741610
• Rilegatura: Copertina rigida
• Numero edizione: 1
• Numero di pagine: 340
• Contatto del produttore: non disponibile
• Persona responsabile: non disponibile