Properties of Lattice-Matched and Strained Indium Gallium Arsenide: No. 8 - Rilegato

Rilegato

ISBN 10: 0852968655 ISBN 13: 9780852968659

Casa editrice: Inst of Engineering & Technology, 1993

Riassunto

The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.

Dettagli dell'edizione

• Editore: Inst of Engineering & Technology
• Data di pubblicazione: 1993
• Lingua: Inglese
• ISBN 10: 0852968655
• ISBN 13: 9780852968659
• Rilegatura: Copertina rigida
• Numero di pagine: 340
• Redattore: Bhattacharya Pallab
• Contatto del produttore: non disponibile
• Persona responsabile: non disponibile