Introduction to Semiconductor Devices for Engineering Students - Brossura

Tsybeskov, Leonid

Brossura

ISBN 10: 104103685X ISBN 13: 9781041036852

Casa editrice: CRC Press, 2026

Riassunto

This textbook provides a highly focused overview of the physics and materials science of semiconductors and introductory analysis of semiconductor devices. It will be foundational reading for those planning to dedicate their professional careers to the development of novel semiconductor materials and devices.

Introduction to Semiconductor Devices for Engineering Students discusses the energy band diagram and specific models that are traditionally used in explaining the properties of semiconductor devices. The book includes detailed (but not overwhelming) explanations of major properties of semiconductors, principles of operations and limitations of Schottky and PN junction diodes, solar cells, photodetectors, light-emitting diodes, bipolar junction transistors, and metal-oxide-semiconductor-based devices (MOSFETs, memory devices, etc.). It will help the reader to quickly and efficiently build the required knowledge in semiconductor physics and materials science (including energy band diagrams, density of energy states, electron statistics, carrier transport, electronic noise, etc.) without diving into the complexity of quantum mechanics and solid-state theory. The important feature of the book is numerous examples of calculations with emphasis on using proper units and fundamental constants, which are critically important for engineering students developing a feel of numbers associated with semiconductor device design, limitations and operations.

This book is intended as a textbook for a one-semester semiconductor device course for undergraduate engineering students. This course is required for all electrical engineering and some materials science programs.

A solutions manual and figure slides are available for adopting professors.

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Informazioni sull'autore

Dr. Leonid Tsybeskov is a Distinguished Professor in Helen and John C. Hartmann Department of Electrical and Computer Engineering at New Jersey Institute of Technology. He received his Ph.D. from Odessa Mechnikov University; Applied Physics in 1983. His research interests are in semiconductor nanostructures.

Dettagli dell'edizione

• Editore: CRC Press
• Data di pubblicazione: 2026
• Lingua: Inglese
• ISBN 10: 104103685X
• ISBN 13: 9781041036852
• Rilegatura: Copertina flessibile
• Numero edizione: 1
• Numero di pagine: 194
• Contatto del produttore: Taylor and Francis, GPSR Taylor and Francis; gpsr@taylorandfrancis.com; ; Taylor & Francis Verlag GmbH, Kaufingerstraße 24; München; 80331; Germania